검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L Solid-State Electronics, 52(10), 1636, 2008 |
| 2 |
C-infinity-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs Houk Y, Iniguez B, Flandre D, Nazarov A Solid-State Electronics, 50(7-8), 1261, 2006 |
| 3 |
The operation of 0.35 mu m partially depleted SOICMOS technology in extreme environments Li Y, Niu GF, Cressler JD, Patel J, Liu ST, Reed RA, Mojarradi MM, Blalock BJ Solid-State Electronics, 47(6), 1111, 2003 |
| 4 |
Highly durable SiC nMISFET's at 450 degrees C Zhu WJ, Wang XW, Ma TP, Tucker JB, Rao MV Materials Science Forum, 338-3, 1311, 2000 |