| 1 |
Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate
Zhang CW, Li Y, Yue WJ, Fu XQ, Li ZM
Solid-State Electronics, 145, 34, 2018 |
| 2 |
The role of cold carriers and the multiple-carrier process of Si-H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices
Sharma P, Tyaginov S, Jech M, Wimmer Y, Rudolf F, Enichlmair H, Park JM, Ceric H, Grasser T
Solid-State Electronics, 115, 185, 2016 |
| 3 |
Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature
Lee SM, Yu CG, Cho WJ, Park JT
Solid-State Electronics, 72, 88, 2012 |
| 4 |
Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation
Kasakawa T, Tabata H, Onodera R, Kojima H, Kimura M, Hara H, Inoue S
Solid-State Electronics, 56(1), 207, 2011 |
| 5 |
Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs
Huang HS, Wang MC, Hsieh ZY, Chen SY, Chuang AE, Liu CH
Solid-State Electronics, 54(5), 527, 2010 |
| 6 |
Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs
Rafi JM, Simoen E, Mercha A, Campabadal F, Claeys C
Solid-State Electronics, 49(9), 1536, 2005 |
| 7 |
A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs
Vandooren A, Cristoloveanu S, Conley JF, Mojarradi M, Kolawa E
Solid-State Electronics, 47(9), 1419, 2003 |
| 8 |
Experimental methods for investigating the defect properties of SiO2 in metal oxide semiconductor transistors
Weber W, Thewes R
Journal of the Electrochemical Society, 145(10), 3638, 1998 |
| 9 |
Leakage Performance and Breakdown Mechanism of Silicon-Rich Oxide and Fluorinated Oxide Prepared by Electron-Cyclotron-Resonance Chemical-Vapor-Deposition
Chang KM, Wang SW, Yeh TH, Li CH, Luo JJ
Journal of the Electrochemical Society, 144(5), 1754, 1997 |
