검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
On the analogy of the potential barrier of trenched JFET and JBS devices Bellone S, Di Benedetto L, Licciardo GD Solid-State Electronics, 120, 6, 2016 |
| 2 |
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J Solid-State Electronics, 94, 56, 2014 |
| 3 |
Critical issues for interfaces to p-type SiC and GaN in power devices Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Lo Nigro R, Saggio M, Leszczynski M, Pristawko P, Raineri V Applied Surface Science, 258(21), 8324, 2012 |
| 4 |
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes Radhakrishnan R, Zhao JH Solid-State Electronics, 63(1), 167, 2011 |
| 5 |
Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez R, Mestres N, Tournier D, Jorda X, Vellvehi M, Godignon P Materials Science Forum, 483, 945, 2005 |
| 6 |
Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers Rang T, Higelin G, Kurel R Materials Science Forum, 457-460, 1045, 2004 |
| 7 |
A JBS diode with controlled forward temperature coefficient and surge current capability Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 389-3, 1129, 2002 |
| 8 |
Reverse characteristics of a 4H-SiC Schottky barrier diode Hatakeyama T, Shinohe T Materials Science Forum, 389-3, 1169, 2002 |
| 9 |
High-power SiC diodes: Characteristics, reliability and relation to material defects Lendenmann H, Dahlquist F, Bergman JP, Bleichner H, Hallin C Materials Science Forum, 389-3, 1259, 2002 |
| 10 |
A high performance JBS rectifier - design considerations Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 353-356, 683, 2001 |