화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping
Fink C, Anil KG, Geiger H, Hansch W, Kaesen F, Schulze J, Sulima T, Eisele I
Solid-State Electronics, 46(3), 387, 2002
2 Quantum wire transistor at locally grown edges
Kaesen F, Hansch W, Eisele I, Kalus M
Thin Solid Films, 321(1-2), 106, 1998
3 Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs
Hansch W, Rao VR, Fink C, Kaesen F, Eisele I
Thin Solid Films, 321(1-2), 206, 1998
4 Low temperature electrical surface passivation of MBE-grown pin diodes by hydrogen and oxygen plasma processes
Strass A, Hansch W, Kaesen F, Fehlauer G, Bieringer P, Fischer A, Eisele I
Thin Solid Films, 321(1-2), 261, 1998
5 Optimization of the channel doping profile of vertical sub-100 nm MOSFETs
Kaesen F, Fink C, Anil KG, Hansch W, Doll T, Grabolla T, Schreiber H, Eisele I
Thin Solid Films, 336(1-2), 309, 1998
6 Defect-Free Strain Relaxation in Locally MBE-Grown SiGe Heterostructures
Rupp T, Kaesen F, Hansch W, Hammerl E, Gravesteijn DJ, Schorer R, Silveira E, Abstreiter G, Eisele I
Thin Solid Films, 294(1-2), 27, 1997