| 1 |
Back gate influence on front channel operation of p-channel double gate polysilicon TFTs
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Thin Solid Films, 517(23), 6364, 2009 |
| 2 |
On the study of p-channel thin-film transistors fabricated by SLS ELA crystallization techniques
Exarchos MA, Moschou DC, Papaioannou GJ, Kouvatsos DN, Arapoyanni A, Voutsas AT
Thin Solid Films, 517(23), 6375, 2009 |
| 3 |
Role of bandgap states on the electrical behavior of sequential lateral solidified polycrystalline silicon TFTs
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Journal of the Electrochemical Society, 155(1), H1, 2008 |
| 4 |
Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs -Effects of gate width variation and device orientation
Kontogiannopoulos GP, Farmakis FV, Kouvatsos DN, Papaloannou GJ, Voutsas AT
Solid-State Electronics, 52(3), 388, 2008 |
| 5 |
Investigation of the undershoot effect in polycrystalline silicon thin film transistors
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Solid-State Electronics, 52(3), 394, 2008 |
| 6 |
Front and back channel properties of asymmetrical double-gate polysilicon TFTs
Farmakis FV, Kouvatsos DN, Voutsas AT, Moschou DC, Kontogiannopoulos GP, Papaioannou GJ
Journal of the Electrochemical Society, 154(10), H910, 2007 |
| 7 |
Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films
Kouvatsos DN, Farmakis FV, Moschou DC, Kontogiannopoulos GP, Papaioannou GJ, Voutsas AT
Solid-State Electronics, 51(6), 936, 2007 |
| 8 |
Device degradation behavior and polysilicon film morphology of thin film transistors fabricated using advanced excimer laser lateral solidification techniques
KouvatsoS DN, Voutsas A, Michalas L, FarmakiS FV, Papaioannou GJ
Thin Solid Films, 515(19), 7413, 2007 |
| 9 |
Gate/drain bias-induced degradation effects in TFTs fabricated in unhydrogenated SPC polycrystalline silicon films
Kouvatsos DN, Davazoglou D
Thin Solid Films, 426(1-2), 250, 2003 |
| 10 |
Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665 degrees C strain point glass substrates
Hatalis MK, Kouvatsos DN, Kung JH, Voutsas AT, Kanicki J
Thin Solid Films, 338(1-2), 281, 1999 |
