| 1 |
Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (001) substrates
Lai B, Li Q, Lau KM
Journal of Crystal Growth, 484, 12, 2018 |
| 2 |
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
Shi B, Li Q, Lau KM
Journal of Crystal Growth, 464, 28, 2017 |
| 3 |
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Shi B, Lau KM
Journal of Crystal Growth, 433, 19, 2016 |
| 4 |
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
Li Q, Jiang HX, Lau KM
Journal of Crystal Growth, 454, 19, 2016 |
| 5 |
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio
Ma J, Lu X, Zhu XL, Huang TD, Jiang HX, Xu PQ, Lau KM
Journal of Crystal Growth, 414, 237, 2015 |
| 6 |
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping
Liu C, Liu ZJ, Huang TD, Ma J, Lau KM
Journal of Crystal Growth, 414, 243, 2015 |
| 7 |
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays
Li Q, Ng KW, Tang CW, Lau KM, Hill R, Vert A
Journal of Crystal Growth, 405, 81, 2014 |
| 8 |
Enhancement-mode L-g=50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with f(max) surpassing 408 GHz
Li M, Tang CW, Li H, Lau KM
Solid-State Electronics, 99, 7, 2014 |
| 9 |
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers
Ma J, Zhu XL, Wong KM, Zou XB, Lau KM
Journal of Crystal Growth, 370, 265, 2013 |
| 10 |
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates
Deng DM, Chiu CH, Kuo HC, Chen P, Lau KM
Journal of Crystal Growth, 315(1), 238, 2011 |
