검색결과 : 5건
No. | Article |
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1 |
Terahertz detection in a slit-grating-gate field-effect-transistor structure Yermolayev DM, Marem'yanin KM, Fateev DV, Morozov SV, Maleev NA, Zemlyakov VE, Gavrilenko VI, Shapoval SY, Sizov FF, Popov VV Solid-State Electronics, 86, 64, 2013 |
2 |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m Wang JS, Hsiao RS, Lin G, Lin KF, Liu HY, Lai CM, Wei L, Liang CY, Chi JY, Kovsh AR, Maleev NA, Livshits DA, Chen JF, Yu HC, Ustinov VM Journal of Vacuum Science & Technology B, 22(6), 2663, 2004 |
3 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with enhanced optical gain Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasil'ev AP, Semenova EA, Shernyakov YM, Maximov MV, Livshits DA, Ustinov VM, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 251(1-4), 729, 2003 |
4 |
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots Maleev NA, Sakharov AV, Moeller C, Krestnikov IL, Kovsh AR, Mikhrin SS, Zhukov AE, Ustinov VM, Passenberg W, Pawlowski E, Kunezel H, Tsatsul'nikov AF, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 227, 1146, 2001 |
5 |
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D Journal of Crystal Growth, 227, 1155, 2001 |