| 1 |
Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method
Nakagawa A, Masuoka F, Chiba S, Endo H, Megro K, Kashiwaba Y, Ojima T, Aota K, Niikura I, Kashiwaba Y
Applied Surface Science, 254(1), 164, 2007 |
| 2 |
Homoepitaxial growth of non-polar ZnO (11(2)over-bar-0) films on off-angle ZnO substrates by MOCVD
Abe T, Kashiwaba Y, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y
Journal of Crystal Growth, 298, 457, 2007 |
| 3 |
Comparison of non-polar ZnO (1 1 (2)over-bar-0) films deposited on single crystal ZnO (1 1 (2)over-bar-0) and sapphire (0 1 (1)over-bar-2) substrates
Kashiwaba Y, Abe T, Onodera S, Masuoka F, Nakagawa A, Endo H, Niikura I, Kashiwaba Y
Journal of Crystal Growth, 298, 477, 2007 |
| 4 |
A novel tri-control gate surrounding gate transistor(TCG-SGT) nonvolatile memory cell for flash memory
Ohba T, Nakamura H, Sakuraba H, Masuoka F
Solid-State Electronics, 50(6), 924, 2006 |
| 5 |
Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors
Yamaha T, Masuoka F
Journal of the Electrochemical Society, 146(8), 3065, 1999 |
