화학공학소재연구정보센터
검색결과 : 25건
No. Article
1 Physical properties of the ferroelectric capacitors based on Al-doped HfO2 grown via Atomic Layer Deposition on Si
Vulpe S, Nastase F, Dragoman M, Dinescu A, Romanitan C, Iftimie S, Moldovan A, Apostol N
Applied Surface Science, 483, 324, 2019
2 Enhancing performance of nonvolatile transistor memories via electron-accepting composition in triphenylamine-based random copolymers
Chen CK, Hsieh HC, Shih CC, Wu CH, Fu MC, Higashihara T, Jeng RJ, Chen WC
Journal of Polymer Science Part A: Polymer Chemistry, 57(10), 1113, 2019
3 High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer
Lim JG, Yang SD, Yun HJ, Jung JK, Park JH, Lim C, Cho GS, Park SG, Huh C, Lee HD, Lee GW
Solid-State Electronics, 140, 134, 2018
4 Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks
Na H, Jeong J, Lee J, Shin H, Lee S, Sohn H
Current Applied Physics, 17(10), 1361, 2017
5 Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A)
Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L
Solid-State Electronics, 125, 189, 2016
6 Characterizations of MoTiO5 flash memory devices with post-annealing
Kao CH, Chen H, Chen SZ, Chen YJ, Chu YC
Thin Solid Films, 570, 564, 2014
7 Temperature-dependent current conduction of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications
Juan PC, Lin CL, Liu CH, Chen CH, Chang YK, Yeh LY
Thin Solid Films, 539, 360, 2013
8 Ferroelectric properties of the organic films of poly(vinylidene fluoride-trifluoroethylene blended with inorganic Pb(Zr, Ti)O-3
Lee WG, Park BE, Park KE
Thin Solid Films, 546, 171, 2013
9 Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor
Saif AA, Poopalan P
Solid-State Electronics, 62(1), 25, 2011
10 Characteristics of Schottky barrier silicon nanocluster floating gate flash memory
Son D, Kim J, Lee K, Won S, Kim E, Kim TY, Jang M, Park K
Thin Solid Films, 519(18), 6174, 2011