검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
SiGeHMOSFET monolithic inverting current mirror Michelakis K, Despotopoulos S, Papavassiliou C, Vilches A, Fobelets K, Toumazou C Solid-State Electronics, 49(4), 591, 2005 |
| 2 |
SiGe virtual substrate HMOS transistor for analogue applications Michelakis K, Despotopoulos S, Gaspari V, Vilches A, Fobelets K, Papavassiliou C, Toumazou C, Zhang J Applied Surface Science, 224(1-4), 386, 2004 |
| 3 |
Effect of temperature on the transfer characteristic of a 0.5 mu m-gate Si : SiGe depletion-mode n-MODFET Gaspari V, Fobelets K, Velazquez-Perez JE, Ferguson R, Michelakis K, Despotopoulos S, Papavassilliou C Applied Surface Science, 224(1-4), 390, 2004 |
| 4 |
Comparison of sub-micron Si : SiGe heterojunction nFETs to Si nMOSFET in present-day technologies Fobelets K, Jeamsaksiri W, Papavasilliou C, Vilches T, Gaspari V, Velazquez-Perez JE, Michelakis K, Hackbarth T, Konig U Solid-State Electronics, 48(8), 1401, 2004 |
| 5 |
Buried-channel SiGe HMODFET device potential for micropower applications Vilches A, Michelakis K, Fobelets K, Haigh D, Papavassiliou C, Hackbath T, Konig U Solid-State Electronics, 48(8), 1423, 2004 |
| 6 |
Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures Arbiol J, Peiro F, Cornet A, Michelakis K, Georgakilas A Journal of Vacuum Science & Technology B, 17(6), 2540, 1999 |
| 7 |
Comparison of homogeneously grown and temperature-graded InAlAs buffers in the range 400-560 degrees C: effects on surface morphology and layer stability Arbiol J, Peiro F, Cornet A, Morante JR, Michelakis K, Georgakilas A Thin Solid Films, 357(1), 61, 1999 |