| 1 |
Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I-V method
Constant A, Godignon P
Solid-State Electronics, 63(1), 70, 2011 |
| 2 |
Nonvolatile Poly-silicon Memory Device with Oxide-Nitride-Oxynitride Stack Structure on Glass for Flat Panel Display
Jung S, Jo J, Jang K, Son H, Kim J, Heo J, Hwang S, Kim K, Choi BD, Yi J
Molecular Crystals and Liquid Crystals, 499, 590, 2009 |
| 3 |
Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates
Kelaidis N, Ioannou-Sougleridis V, Skarlatos D, Tsamis C, Krontiras CA, Georga SN, Kellerman B, Seacrist M
Thin Solid Films, 517(1), 350, 2008 |
| 4 |
Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass
Jung S, Hwang S, Kim K, Dhungel SK, Chung HK, Choi BD, Lee KY, Yi J
Thin Solid Films, 515(16), 6615, 2007 |
| 5 |
High-resolution photoemission electron spectroscopy study on the oxynitridation of 6H-SiC(0001)-root 3 x root 3R30 degrees surface
Labis J, Oh J, Namatame H, Taniguchi M, Hirai M, Kusaka M, Iwami M
Applied Surface Science, 237(1-4), 170, 2004 |
| 6 |
Nitrogen incorporation in thin silicon oxides in a N2O plasma -Effects of processing conditions
Kaluri SR, Hess DW
Journal of the Electrochemical Society, 145(2), 662, 1998 |
