검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy Suzuki H, Sadato H, Haraguchi T, Yamauchi T, Ozeki M, Ikari T Thin Solid Films, 540, 79, 2013 |
| 2 |
Etching reaction of methylchloride molecule on the GaAs (001)-2x4 surface Ozeki M, Iwasa Y, Shimizu Y Applied Surface Science, 253(13), 5914, 2007 |
| 3 |
Atomic layer epitaxy of MnAs on GaAs(001) Ozeki M, Haraguchi T, Fujita A Journal of Crystal Growth, 298, 90, 2007 |
| 4 |
Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE Komaki H, Nakamura T, Katayama R, Onabe K, Ozeki M, Ikari T Journal of Crystal Growth, 301, 473, 2007 |
| 5 |
Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE Komaki H, Katayama R, Onabe K, Ozeki M, Ikari T Journal of Crystal Growth, 305(1), 12, 2007 |
| 6 |
Crosslinking and biodegradation of poly(butylene succinate) prepolymers containing itaconic or maleic acid units in the main chain Teramoto N, Ozeki M, Fujiwara I, Shibata M Journal of Applied Polymer Science, 95(6), 1473, 2005 |
| 7 |
A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy Ozeki M, Haraguchi T, Takeuchi T, Maeda K Journal of Crystal Growth, 276(3-4), 374, 2005 |
| 8 |
InAs and GaAs quantum dots grown by hyperthermal source beams Ozeki M, Shimizu Y Journal of Crystal Growth, 262(1-4), 139, 2004 |
| 9 |
Adsorption dynamics of GaCl on GaAs(001) 2 x 4 beta 2: relaxation of molecules by collision on a highly corrugated surface Ohashi M, Ozeki M Chemical Physics Letters, 370(1-2), 112, 2003 |
| 10 |
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates Lovergine N, Traversa M, Prete P, Yoshino K, Ozeki M, Pentimalli M, Tapfer L, Mancini AM Journal of Crystal Growth, 248, 37, 2003 |