검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs Qin CL, Wang GL, Kolahdouz M, Luo J, Yin HX, Yang P, Li JF, Zhu HL, Chao Z, Ye TC, Radamson HH Solid-State Electronics, 124, 10, 2016 |
| 2 |
New method to calibrate the pattern dependency of selective epitaxy of SiGe layers Kolahdouz M, Maresca L, Ostling M, Riley D, Wise R, Radamson HH Solid-State Electronics, 53(8), 858, 2009 |
| 3 |
The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 257, 2008 |