검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology Wang GL, Abedin A, Moeen M, Kolandouz M, Luo J, Guo YL, Chen T, Yin HX, Zhu HL, Li JF, Zhao C, Radamson HH Solid-State Electronics, 103, 222, 2015 |
| 2 |
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs Wang GL, Moeen M, Abedin A, Xu YF, Luo J, Guo YL, Qin CL, Tang ZY, Yin HZ, Li JF, Yan J, Zhu HL, Zhao C, Chen DP, Ye TC, Kolahdouz M, Radamson HH Solid-State Electronics, 114, 43, 2015 |
| 3 |
Lateral solid phase epitaxy of amorphously grown Si1-xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing Skibitzki O, Yamamoto Y, Schubert MA, Tillack B Thin Solid Films, 593, 91, 2015 |
| 4 |
Ultralow temperature ramping rate of LT to HT for the growth of highquality Ge epilayer on Si (100) by RPCVD Chen D, Xue ZY, Wei X, Wang G, Ye L, Zhang M, Wang DW, Liu S Applied Surface Science, 299, 1, 2014 |
| 5 |
Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films Adam T, Loubet N, Reznicek A, Paruchuri V, Sampson R, Sadana D Thin Solid Films, 520(8), 3155, 2012 |
| 6 |
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition He H, Brabant P, Chung K, Shinriki M, Adam T, Reznicek A, Sadana D, Hasaka S, Francis T Thin Solid Films, 520(8), 3175, 2012 |
| 7 |
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D Thin Solid Films, 520(8), 3190, 2012 |
| 8 |
Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD Skibitzki O, Yamamoto Y, Schubert MA, Weidner G, Tillack B Solid-State Electronics, 60(1), 13, 2011 |
| 9 |
Low temperature selective epitaxial growth of SiGe layers using various dielectric mask patterns and process conditions Choi AR, Choi SS, Kim JT, Cho DH, Han TH, Shim KH Applied Surface Science, 254(19), 6081, 2008 |
| 10 |
The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH Thin Solid Films, 517(1), 257, 2008 |