검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC Solid-State Electronics, 49(10), 1669, 2005 |
| 2 |
The revolution in SiGe: impact on device electronics Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S Applied Surface Science, 224(1-4), 9, 2004 |
| 3 |
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS Kim K, Chuang CT, Rim K, Joshi RV Solid-State Electronics, 48(2), 239, 2004 |
| 4 |
Strained SiCMOS (SS CMOS) technology: opportunities and challenges Rim K, Anderson R, Boyd D, Cardone F, Chan K, Chen H, Christansen S, Chu J, Jenkins K, Kanarsky T, Koester S, Lee BH, Lee K, Mazzeo V, Mocuta A, Mocuta D, Mooney PM, Oldiges P, Ott J, Ronsheim P, Roy R, Steegen A, Yang M, Zhu H, Ieong M, Wong HSP Solid-State Electronics, 47(7), 1133, 2003 |
| 5 |
Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition Hoyt JL, Mitchell TO, Rim K, Singh DV, Gibbons JF Thin Solid Films, 321(1-2), 41, 1998 |