검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Dheilly N, Planson D, Pagues G, Scharnholz S Solid-State Electronics, 73, 32, 2012 |
| 2 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
| 3 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 4 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 5 |
Fabrication and characterisation of high-voltage SiC-thyristors Zorngiebel V, Scharnholz S, Spahn E, Brosselard P, Arssi N, Chante JP, Planson D, Raynaud C, Spangenberg B, Kurz H Materials Science Forum, 433-4, 883, 2002 |
| 6 |
Remote PECVD oxide utilized in U-MOS structures and different MOSFETs on SiC Scharnholz S, Hellmund O, Stein J, Spangenberg B, Kurz H Materials Science Forum, 353-356, 651, 2001 |
| 7 |
Photon emission mechanisms in 6H and 4H-SiC MOSFETs Banc C, Bano E, Ouisse T, Scharnholz S, Schmid U, Wondrak W, Niemann E Materials Science Forum, 338-3, 695, 2000 |
| 8 |
Hot carrier-induced photon emission in 6H and 4H-SiC MOSFETs Bano E, Banc C, Ouisse T, Scharnholz S Solid-State Electronics, 44(1), 63, 2000 |