화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth
Racka K, Avdonin A, Sochacki M, Tymicki E, Grasza K, Jakiela R, Surma B, Dobrowolski W
Journal of Crystal Growth, 413, 86, 2015
2 Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
Taube A, Kaczmarski J, Kruszka R, Grochowski J, Kosiel K, Golaszewska-Malec K, Sochacki M, Jung W, Kaminska E, Piotrowska A
Solid-State Electronics, 111, 12, 2015
3 Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus
Krol K, Sochacki M, Strupinski W, Racka K, Guziewicz M, Konarski P, Misnik M, Szmidt J
Thin Solid Films, 591, 86, 2015
4 Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J
Solid-State Electronics, 94, 56, 2014
5 Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
Domanowska A, Miczek M, Ucka R, Matys M, Adamowicz B, Zywicki J, Taube A, Korwin-Mikke K, Gieraltowska S, Sochacki M
Applied Surface Science, 258(21), 8354, 2012
6 Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC
Kwietniewski N, Sochacki M, Szmidt J, Guziewicz M, Kaminska E, Piotrowska A
Applied Surface Science, 254(24), 8106, 2008
7 Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
Sochacki M, Kolendo A, Szmidt J, Werbowy A
Solid-State Electronics, 49(4), 585, 2005
8 Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes
Sochacki M, Szmidt J
Thin Solid Films, 446(1), 106, 2004
9 Deoxyribonucleoside 3 '-O-(2-thio- and 2-oxo-"spiro"-4,4-pentamethylene-1,3,2-oxathiaphospholane)s : Monomers for stereocontrolled synthesis of oligo(deoxyribonucleoside phosphorothioate)s and chimeric PS/PO oligonucleotides
Stec WJ, Karwowski B, Boczkowska M, Guga P, Koziolkiewicz M, Sochacki M, Wieczorek MW, Blaszczyk J
Journal of the American Chemical Society, 120(29), 7156, 1998