검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT Journal of Crystal Growth, 456, 151, 2016 |
| 2 |
Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers Novikov SV, Staddon CR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 425, 125, 2015 |
| 3 |
Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy Novikov SV, Powell REL, Staddon CR, Kent AJ, Foxon CT Journal of Crystal Growth, 403, 43, 2014 |
| 4 |
Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 350(1), 80, 2012 |
| 5 |
Plasma-assisted electroepitaxy as a method for the growth of GaN layers Novikov SV, Staddon CR, Kent AJ, Foxon CT Journal of Crystal Growth, 316(1), 51, 2011 |
| 6 |
Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Powell REL, Akimov AV, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 322(1), 23, 2011 |
| 7 |
Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices Novikov SV, Staddon CR, Foxon CT, Yu KM, Broesler R, Hawkridge M, Liliental-Weber Z, Denlinger J, Demchenko I, Luckert F, Edwards PR, Martin RW, Walukiewicz W Journal of Crystal Growth, 323(1), 60, 2011 |
| 8 |
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals Novikov SV, Staddon CR, Foxon CT, Luckert F, Edwards PR, Martin RW, Kent AJ Journal of Crystal Growth, 323(1), 80, 2011 |
| 9 |
Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content Novikov SV, Staddon CR, Akimov AV, Campion RP, Zainal N, Kent AJ, Foxon CT, Chen CH, Yu KM, Walukiewicz W Journal of Crystal Growth, 311(13), 3417, 2009 |
| 10 |
Molecular beam epitaxy of p-type cubic GaMnN layers Foxon CT, Novikov SV, Zhao L, Edmonds KW, Giddings AD, Wang KY, Campion RP, Staddon CR, Fay MW, Han Y, Brown PD, Sawicki M, Gallagher BL Journal of Crystal Growth, 278(1-4), 685, 2005 |