검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers Chagarov EA, Kavrik MS, Fang ZW, Tsai W, Kummel AC Applied Surface Science, 443, 644, 2018 |
| 2 |
Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors Zhu F, Zhao H, Ok I, Kim HS, Yum J, Lee JC, Goel N, Tsai W, Gaspe CK, Santos MB Electrochemical and Solid State Letters, 12(4), H131, 2009 |
| 3 |
Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W Journal of Crystal Growth, 311(7), 1950, 2009 |
| 4 |
Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation Delabie A, Brunco DP, Conard T, Favia P, Bender H, Franquet A, Sioncke S, Vandervorst W, Van Elshocht S, Heyns M, Meuris M, Kim E, McIntyre PC, Saraswat KC, LeBeau JM, Cagnon J, Stemmer S, Tsai W Journal of the Electrochemical Society, 155(12), H937, 2008 |
| 5 |
Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs heterostructures Shiu KH, Chiang CH, Lee YJ, Lee WC, Chang P, Tung LT, Hong M, Kwo J, Tsai W Journal of Vacuum Science & Technology B, 26(3), 1132, 2008 |
| 6 |
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC Journal of Vacuum Science & Technology B, 25(4), 1491, 2007 |
| 7 |
Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching Claes M, De Gendt S, Witters T, Kaushik V, Conard T, Zhao C, Manabe Y, Delabie A, Rohr E, Chen J, Tsai W, Heyns MM Journal of the Electrochemical Society, 151(11), F269, 2004 |
| 8 |
Simulation of Uniformity and Lifetime Effects in Collimated Sputtering Tait RN, Dew SK, Tsai W, Hodul D, Smy T, Brett MJ Journal of Vacuum Science & Technology B, 14(2), 679, 1996 |
| 9 |
High Selectivity Plasma-Etching of Silicon Dioxide with a Dual-Frequency 27/2 MHz Capacitive Radio-Frequency Discharge Tsai W, Mueller G, Lindquist R, Frazier B, Vahedi V Journal of Vacuum Science & Technology B, 14(5), 3276, 1996 |
| 10 |
CONTRIBUTION OF THE COMBINED HEAT AND POWER PROCESS TO THE CO2 REDUCTION IN COMPARISON WITH OTHER OPTIONS ARDONE A, FICHTNER W, TSAI W, WIETSCHEL M, RENTZ O Brennstoff-Warme-Kraft, 47(6), 247, 1995 |