화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Back gate influence on front channel operation of p-channel double gate polysilicon TFTs
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Thin Solid Films, 517(23), 6364, 2009
2 On the study of p-channel thin-film transistors fabricated by SLS ELA crystallization techniques
Exarchos MA, Moschou DC, Papaioannou GJ, Kouvatsos DN, Arapoyanni A, Voutsas AT
Thin Solid Films, 517(23), 6375, 2009
3 Role of bandgap states on the electrical behavior of sequential lateral solidified polycrystalline silicon TFTs
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Journal of the Electrochemical Society, 155(1), H1, 2008
4 Hot-carrier stress induced degradation of SLS ELA polysilicon TFTs -Effects of gate width variation and device orientation
Kontogiannopoulos GP, Farmakis FV, Kouvatsos DN, Papaloannou GJ, Voutsas AT
Solid-State Electronics, 52(3), 388, 2008
5 Investigation of the undershoot effect in polycrystalline silicon thin film transistors
Michalas L, Papaioannou GJ, Kouvatsos DN, Voutsas AT
Solid-State Electronics, 52(3), 394, 2008
6 Process technology for high-resolution AM-PLED displays on flexible metal-foil substrates
Chuang TK, Troccoli M, Kuo PC, Jamshidi-Roudbari A, Hatalis M, Voutsas AT, Afentakis T
Electrochemical and Solid State Letters, 10(8), J92, 2007
7 Front and back channel properties of asymmetrical double-gate polysilicon TFTs
Farmakis FV, Kouvatsos DN, Voutsas AT, Moschou DC, Kontogiannopoulos GP, Papaioannou GJ
Journal of the Electrochemical Society, 154(10), H910, 2007
8 Gate dielectric development for flexible electronics
Joshi PC, Voutsas AT, Hartzell JW
Journal of Vacuum Science & Technology A, 25(4), 1161, 2007
9 Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films
Kouvatsos DN, Farmakis FV, Moschou DC, Kontogiannopoulos GP, Papaioannou GJ, Voutsas AT
Solid-State Electronics, 51(6), 936, 2007
10 Low-temperature growth of thermal quality SiO2 thin films in high-density He/O-2 plasma generated by RF driven ICP source
Joshi PC, Ono Y, Voutsas AT, Hartzell JW
Electrochemical and Solid State Letters, 7(4), G62, 2004