검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Growth of 3C-(Si1-xC1-Y)Gex+y layers on 4H-SiC by molecular beam epitaxy Weih P, Romanus H, Stauden T, Spiess L, Ambacher O, Pezoldt J Materials Science Forum, 483, 173, 2005 |
| 2 |
Structure and composition of 3C-SiC : Ge alloys grown on Si (111) substrates by SSMBE Weih P, Cimalla V, Stauden T, Kosiba R, Spiess L, Romanus H, Gubisch M, Bock W, Freitag T, Fricke P, Ambacher O, Pezoldt J Materials Science Forum, 457-460, 293, 2004 |
| 3 |
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111) Morales FM, Zgheib C, Molina SI, Araujo D, Garcia R, Fernandez C, Sanz-Hervas A, Masri P, Weih P, Stauden T, Ambacher O, Pezoldt J Materials Science Forum, 457-460, 297, 2004 |
| 4 |
Stress control in 3C-SiC films grown on Si(111) Zgheib C, Masri P, Weih P, Ambacher O, Pezoldt J Materials Science Forum, 457-460, 301, 2004 |
| 5 |
Etching of SiC with fluorine ECR plasma Forster C, Cimalla V, Kosiba R, Ecke G, Weih P, Ambacher O, Pezoldt J Materials Science Forum, 457-460, 821, 2004 |
| 6 |
In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces Forster C, Schnabel F, Weih P, Stauden T, Ambacher O, Pezoldt J Thin Solid Films, 455-56, 695, 2004 |
| 7 |
In situ RHEED analysis of the Ge-induced surface reconstructions on 6H-SiC(0001) Weih P, Stauden T, Pezoldt J Materials Science Forum, 389-3, 725, 2002 |
| 8 |
High-resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates Weih P, Cimalla V, Forster C, Pezoldt J, Stauden T, Spiess L, Romanus H, Hermann M, Eickhoff M, Masri P, Ambacher O Materials Science Forum, 433-4, 233, 2002 |
| 9 |
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces Pezoldt J, Forster C, Weih P, Masri P Applied Surface Science, 184(1-4), 79, 2001 |