검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level Mnatsakanov TT, Levinshtein ME, Tandoev AG, Yurkov SN, Palmour JW Solid-State Electronics, 121, 41, 2016 |
| 2 |
Physical limitations of the diffusive approximation in semiconductor device modeling Mnatsakanov TT, Tandoev AG, Levinshtein ME, Yurkov SN Solid-State Electronics, 56(1), 60, 2011 |
| 3 |
dV/dt effect in high-voltage (1.5 kV) 4H-SiC thyristors Yurkov SN, Mnatsakanov TT, Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW Solid-State Electronics, 49(12), 2011, 2005 |
| 4 |
Steady-state and transient characteristics of 10 kV 4H-SiC diodes Levinshtein ME, Mnatsakanov TT, Ivanov PA, Singh R, Palmour JW, Yurkov SN Solid-State Electronics, 48(5), 807, 2004 |
| 5 |
Carrier mobility model for GaN Mnatsakanov TT, Levinshtein ME, Pomortseva LI, Yurkov SN, Simin GS, Khan MA Solid-State Electronics, 47(1), 111, 2003 |
| 6 |
The critical charge density in high voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Mnatsakanov TT, Yurkov SN, Agarwal AK, Palmour JW Solid-State Electronics, 47(4), 699, 2003 |
| 7 |
The critical charge concept for 4H-SiC-based thyristors Mnatsakanov TT, Yurkov SN, Levinshtein ME, Tandoev AG, Agarwal AK, Palmour JW Solid-State Electronics, 47(9), 1581, 2003 |
| 8 |
Parameters of electron-hole scattering in silicon carbide Mnatsakanov TT, Levinshtein ME, Ivanov PA, Tandoev AG, Yurkov SN, Palmour JW, Singh R Materials Science Forum, 433-4, 411, 2002 |
| 9 |
Current rise time constants in switch-on process of SiC thyristors Mnatsakanov TT, Levinshtein ME, Yurkov SN, Ivanov PA, Tandoev AG, Palmour JW, Agarwal AK Solid-State Electronics, 46(4), 525, 2002 |
| 10 |
Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode Levinshtein ME, Mnatsakanov TT, Yurkov SN, Ivanov PA, Tandoev AG, Agarwal AK, Palmour JW Solid-State Electronics, 46(11), 1953, 2002 |