검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain Bablich A, Merfort C, Eliasz J, Schafer-Eberwein H, Haring-Bolivar P, Boehm M Thin Solid Films, 558, 430, 2014 |
| 2 |
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G Solid-State Electronics, 85, 15, 2013 |
| 3 |
An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage Tsai JH, Lour WS, Chao YT, Ye SS, Ma YC, Jhou JC, Wu YR, Ou-Yang JJ Thin Solid Films, 521, 172, 2012 |
| 4 |
Au/CaF2/nSi(111) tunnel emitter phototransistor Vexler MI, Illarionov YY, Suturin SM, Fedorov VV, Sokolov NS Solid-State Electronics, 63(1), 19, 2011 |
| 5 |
4H-SiC BJTs with current gain of 110 Zhang QC, Agarwal A, Burka A, Geil B, Scozzie C Solid-State Electronics, 52(7), 1008, 2008 |
| 6 |
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs Zeng YP, Ostinelli O, Liu HG, Bolognesi CR Solid-State Electronics, 52(8), 1202, 2008 |
| 7 |
Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions Tsai JH, Kang YC, Hsu IH, Weng TY Materials Chemistry and Physics, 100(2-3), 340, 2006 |
| 8 |
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors Zhang B, Chen WJ, Yi K, Li ZJ Solid-State Electronics, 50(3), 480, 2006 |
| 9 |
Current gain of 4H-SiC bipolar transistors including the effect of interface states Domeij M, Danielsson E, Lee HS, Zetterling CM, Ostling M Materials Science Forum, 483, 889, 2005 |
| 10 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |