화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming
Wang X, Shen ZH, Wu SL, Zhang JT
Solid-State Electronics, 132, 1, 2017
2 Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements
Ferraton S, Militaru L, Souifi A, Monfray S, Skotnicki T
Solid-State Electronics, 52(1), 44, 2008
3 An improved substrate current model for ultra-thin gate oxide MOSFETs
Yang LA, Hao Y, Yu CL, Han FY
Solid-State Electronics, 50(3), 489, 2006
4 An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Pregaldiny F, Lallement C, van Langevelde R, Mathiot D
Solid-State Electronics, 48(3), 427, 2004
5 A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 46(12), 2191, 2002
6 Flicker noise in deep submicron nMOS transistors
Lukyanchikova N, Garbar N, Petrichuk M, Simoen E, Claeys C
Solid-State Electronics, 44(7), 1239, 2000
7 Modeling short channel effect on high-k and stacked-gate MOSFETs
Zhang J, Yuan JS, Ma Y
Solid-State Electronics, 44(11), 2089, 2000
8 Modeling of the body current in a Bi-MOS hybrid-mode environment
Yeo KS, Seah SHL, Ma JG, Do MA
Solid-State Electronics, 44(12), 2199, 2000
9 Material aspects of nickel silicide for ULSI applications
Xu DX, Das SR, Peters CJ, Erickson LE
Thin Solid Films, 326(1-2), 143, 1998
10 High-Aspect-Ratio Contacts - A Review of the Current Tungsten Plug Process
Ireland PJ
Thin Solid Films, 304(1-2), 1, 1997