| 1 |
Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
Tsai JH, Niu JS
International Journal of Hydrogen Energy, 44(3), 2053, 2019 |
| 2 |
A simple shift register circuit for depletion-mode oxide TFTs
Pi JE, Ryu MK, Hwang CS, Park SHK, Yoon SM, Lym H, Kim Y, Oh H, Park K
Solid-State Electronics, 79, 2, 2013 |
| 3 |
Numerical investigation on the junctionless nanowire FET
Gnani E, Gnudi A, Reggiani S, Baccarani G, Shen N, Singh N, Lo GQ, Kwong DL
Solid-State Electronics, 71, 13, 2012 |
| 4 |
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
Wang RN, Cai Y, Chen KJ
Solid-State Electronics, 53(1), 1, 2009 |
| 5 |
Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
Huang JC, Wei-Chou HA, Lee CS, Huang DH, Huang MF
Solid-State Electronics, 51(6), 882, 2007 |
| 6 |
DC characterization of accumulation layer and bulk layer electron mobility in 4H-SiC depletion mode MOSFET
Zhao P, Rusli, Zhu CL, Xia JH
Solid-State Electronics, 51(8), 1139, 2007 |
| 7 |
A modified Angelov model for InGaP/InGaAs enhancement and depletion-mode pHEMTs using symbolic defined device technology
Cheng CS, Shih YJ, Chiu HC
Solid-State Electronics, 50(2), 254, 2006 |
| 8 |
Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates
Jang JH, Kim S, Adesida I
Solid-State Electronics, 50(5), 758, 2006 |
| 9 |
Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load
Lee CA, Jin SH, Jung KD, Lee JD, Park BG
Solid-State Electronics, 50(7-8), 1216, 2006 |
| 10 |
DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors
Jonsson R, Wahab Q, Rudner S
Materials Science Forum, 457-460, 1225, 2004 |
