검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer Jia YF, Lv HL, Tang XY, Han C, Song QW, Zhang YM, Zhang YM, Dimitrijev S, Han JS Journal of Crystal Growth, 507, 98, 2019 |
| 2 |
The impact of post-polysilicon gate process on ultra-thin gate oxide integrity Ang CH, Ko LH, Lin WH, Zheng JZ Solid-State Electronics, 46(2), 243, 2002 |
| 3 |
Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process Chang TY, Lei TF, Chao TS, Chen SW, Kao LM, Chen SK, Tuan A, Su TP Solid-State Electronics, 46(8), 1097, 2002 |
| 4 |
Method for Studying the Grown-in Defect Density Spectra in Czochralski Silicon-Wafers Kissinger G, Graf D, Lambert U, Richter H Journal of the Electrochemical Society, 144(4), 1447, 1997 |
| 5 |
Formation Behavior of Infrared Light-Scattering Defects in Silicon During Czochralski Crystal-Growth Hourai M, Nagashima T, Kajita E, Miki S, Shigematsu T, Okui M Journal of the Electrochemical Society, 142(9), 3193, 1995 |