| 1 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 68, 32, 2012 |
| 2 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 3 |
Noise modeling in fully depleted SOI MOSFETs
Pailloncy G, Iniguez B, Dambrine G, Raskin JP, Danneville F
Solid-State Electronics, 48(5), 813, 2004 |
| 4 |
A unified model for high-frequency current noise of MOSFETs
Teng HF, Jang SL, Juang MH
Solid-State Electronics, 47(11), 2043, 2003 |
| 5 |
Optimization of heterojunction devices for high-frequency and low-noise operation
Mateos J
Materials Science Forum, 384-3, 11, 2002 |
| 6 |
Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters
Chen CH, Deen MJ
Journal of Vacuum Science & Technology A, 18(2), 757, 2000 |
