검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
4H-SiC MOSFETs on C(000(-),1) face with inversion channel mobility of 127cm(2)/Vs Fukuda K, Kato M, Senzaki J, Kojima K, Suzuki T Materials Science Forum, 457-460, 1417, 2004 |
| 2 |
Passivation of the 4H-SiC/SiO2 interface with nitric oxide Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK, Weller RA, Pantelides ST, Holland OW, Das MK, Feldman LC Materials Science Forum, 389-3, 967, 2002 |
| 3 |
Correlation between inversion channel mobility and interface traps near the conduction band in SiC MOSFETs Suzuki S, Harada S, Kosugi R, Senzaki J, Fukuda K Materials Science Forum, 389-3, 1045, 2002 |
| 4 |
Influence of the crystalline quality of epitaxial layers on inversion channel mobility in 4H-SiC MOSFETs Kojima K, Ohno T, Suzuki S, Senzaki J, Harada S, Fukuda K, Kushibe M, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 1053, 2002 |
| 5 |
Significant improvement of inversion channel mobility in 4H-SiC MOSFET on (11(2)over-bar0) face using hydrogen post-oxidation annealing Senzaki J, Fukuda K, Kojima K, Harada S, Kosugi R, Suzuki S, Suzuki T, Arai K Materials Science Forum, 389-3, 1061, 2002 |
| 6 |
Effective normal field dependence of inversion channel mobility in 4H-SiC MOSFETs on the (11(2)over-bar0) face Senzaki J, Kojima K, Suzuki T, Fukuda K Materials Science Forum, 433-4, 613, 2002 |
| 7 |
Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face Yano H, Hirao T, Kimoto T, Matsunami H, Asano K, Sugawara Y Materials Science Forum, 338-3, 1105, 2000 |