검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J Solid-State Electronics, 91, 74, 2014 |
| 2 |
A low-power 3.1-10.6 GHz ultra-wideband CMOS low-noise amplifier with common-gate input stage Oh NJ Current Applied Physics, 11(1), 87, 2011 |
| 3 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 4 |
Silicon on insulator MESFETs for RF amplifiers Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ Solid-State Electronics, 54(3), 336, 2010 |
| 5 |
Very low-power CMOS LNA for UWB wireless receivers using current-reused topology Kao HL, Chang KC Solid-State Electronics, 52(1), 86, 2008 |
| 6 |
Simulation study of the noise figure of nanometer-gate nMOS transistors near the scaling limit Cai M, Liu M, Taur Y Solid-State Electronics, 51(5), 667, 2007 |
| 7 |
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier Hua WC, Yang TY, Liu CW Applied Surface Science, 224(1-4), 425, 2004 |
| 8 |
A 4.4 to 5 GHz SiGe low noise amplifier Crippa P, Orcioni S, Ricciardi F, Turchetti C Applied Surface Science, 224(1-4), 429, 2004 |
| 9 |
Novel electronic packages made of highly loaded SiC particle aluminium based composites for space applications Coleto J, Maudes J, Goni J, Marcos J, Calvin J, Costas F Materials Science Forum, 426-4, 2151, 2003 |
| 10 |
Analysis of thermal noise in scaled MOS devices and RF circuits Spedo S, Fiegna C Solid-State Electronics, 46(11), 1933, 2002 |