| 1 |
Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer
Hu SD, Luo J, Jiang YY, Cheng K, Chen YH, Jin JJ, Wang JA, Zhou JL, Tang F, Zhou XC, Gan P
Solid-State Electronics, 117, 146, 2016 |
| 2 |
Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes
Yuan H, Tang XY, Song QW, Zhang YM, Zhang YM, Yang F, Niu YX
Solid-State Electronics, 103, 83, 2015 |
| 3 |
Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel
Baek KJ, Na KY, Lee YJ, Kim YS
Solid-State Electronics, 103, 98, 2015 |
| 4 |
Off-state avalanche-breakdown-induced on-resistance degradation in SGO-NLDMOS
Zhang SF, Han Y, Ding KB, Hu JX, Zhang B, Zhang W, Wu HT
Solid-State Electronics, 81, 27, 2013 |
| 5 |
New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region
Mehrad M, Orouji AA
Current Applied Physics, 12(5), 1340, 2012 |
| 6 |
AlGaN/GaN hybrid MOS-HEMT analytical mobility model
Perez-Tomas A, Fontsere A
Solid-State Electronics, 56(1), 201, 2011 |
| 7 |
Simulation based performance comparison of transistors designed using standard photolithographic and coarse printing design specifications
Wondmagegn WT, Satyala NT, Stiegler HJ, Quevedo-Lopez MA, Forsythe EW, Pieper RJ, Gnade BE
Thin Solid Films, 519(6), 1943, 2011 |
| 8 |
Effects of trench oxide and field plates on the breakdown voltage of SOI LDMOSFET
Park HS
Current Applied Physics, 10(2), 419, 2010 |
| 9 |
Fabricating high performance n-channel lateral double diffused metal-oxide-semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region
Na KY, Kim YS
Current Applied Physics, 9(1), 9, 2009 |
| 10 |
An area efficient body contact for low and high voltage SOI MOSFET devices
Daghighi A, Osman M, Imam MA
Solid-State Electronics, 52(2), 196, 2008 |
