화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Influence of CH4 flow rate on properties of HF-PECVD a-SiC films and solar cell application
Lien SY, Weng KW, Huang JJ, Hsu CH, Shen CT, Wang CC, Lin YS, Wuu DS, Wu DC
Current Applied Physics, 11(1), S21, 2011
2 Formation of Sn metal spheres by plasma treatment
Han DH, Kwon SH, Lee JJ
Thin Solid Films, 519(20), 7106, 2011
3 Surface modification of fluorocarbon polymer films for improved adhesion using atmospheric-pressure nonthermal plasma graft-polymerization
Okubo M, Tahara M, Saeki N, Yamamoto T
Thin Solid Films, 516(19), 6592, 2008
4 Characterisation of ultrashort pulse laser ablation of SmBaCuO
D'Alessio L, De Bonis A, Galasso A, Morone A, Santagata A, Teghil R, Villani P, Zaccagnino M
Applied Surface Science, 248(1-4), 295, 2005
5 Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films
Wang YH, Kumar R, Zhou X, Pan JS, Chai JW
Thin Solid Films, 473(1), 132, 2005
6 Preparation, characterization and electronic and optical properties of plasma-polymerized nitriles
Hu X, Zhao XY, Uddin A, Lee CB
Thin Solid Films, 477(1-2), 81, 2005
7 Thermal plasma synthesis of BaFe12O19 (BaM) films
Vidal EE, Taylor PR
Plasma Chemistry and Plasma Processing, 23(4), 609, 2003
8 Plasma deposition of thin film silicon: kinetics monitored by optical emission spectroscopy
Feitknecht L, Meier J, Torres P, Zurcher J, Shah A
Solar Energy Materials and Solar Cells, 74(1-4), 539, 2002
9 Gate Quality Si3N4 Prepared by Low-Temperature Remote Plasma-Enhanced Chemical-Vapor-Deposition for III-V Semiconductor-Based Metal-Insulator-Semiconductor Devices
Park DG, Tao M, Li D, Botchkarev AE, Fan Z, Wang Z, Mohammad SN, Rockett A, Abelson JR, Morkoc H, Heyd AR, Alterovitz SA
Journal of Vacuum Science & Technology B, 14(4), 2674, 1996
10 Characterization of Silicon-Nitride Films Formed by Synchrotron Radiation-Excited Chemical-Vapor-Deposition
Kyuragi H
Journal of Vacuum Science & Technology B, 14(5), 3305, 1996