| 1 |
Optimum bias of power transistor in 0.18 mu m CMOS technology for Bluetooth application
Hsu HM, Lee TH
Solid-State Electronics, 50(3), 412, 2006 |
| 2 |
Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices
Chew KW, Yeo KS, Chu SFS, Cheng M
Solid-State Electronics, 50(7-8), 1219, 2006 |
| 3 |
The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages
Bauer FD
Solid-State Electronics, 48(5), 705, 2004 |
| 4 |
A lateral structure for low-cost fabrication of COOLMOS (TM)
Shahrjerdi D, Fathipour M, Hekmatshoar B, Khakifirooz A
Solid-State Electronics, 48(10-11), 1953, 2004 |
| 5 |
All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A
Luo Y, Fursin L, Zhao JH, Alexandrov P, Wright B, Weiner M
Materials Science Forum, 389-3, 1325, 2002 |
| 6 |
A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics
Kang EG, Sung MY
Solid-State Electronics, 46(2), 295, 2002 |
| 7 |
Physical simulations on the operation of 4H-SiC microwave power transistors
Jonsson R, Wahab Q, Rudner S
Materials Science Forum, 338-3, 1263, 2000 |
