검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Evidence of strong spin-orbit interaction in strained epitaxial germanium Morrison C, Foronda J, Wisniewski P, Rhead SD, Leadley DR, Myronov M Thin Solid Films, 602, 84, 2016 |
| 2 |
Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe Hartmann JM, Benevent V, Veillerot M, Halimaoui A Thin Solid Films, 557, 19, 2014 |
| 3 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
| 4 |
A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers Hartmann JM, Benevent V, Damlencourt JF, Billon T Thin Solid Films, 520(8), 3185, 2012 |
| 5 |
High-temperature growth of very high germanium content SiGe virtual substrates Bogumilowicz Y, Hartmann JM, Di Nardo C, Holliger P, Papon AM, Rolland G, Billon T Journal of Crystal Growth, 290(2), 523, 2006 |
| 6 |
Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces Hartmann JM, Burdin M, Rolland G, Billon T Journal of Crystal Growth, 294(2), 288, 2006 |
| 7 |
High germanium content SiGe virtual substrates grown at high temperatures Bogumilowicz Y, Hartmann JM, Laugier F, Rolland G, Billon T, Cherkashin N, Claverie A Journal of Crystal Growth, 283(3-4), 346, 2005 |