검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF Journal of Crystal Growth, 464, 20, 2017 |
| 2 |
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA Journal of Crystal Growth, 392, 74, 2014 |
| 3 |
In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy Sugaya T, Oshima R, Matsubara K, Niki S Journal of Crystal Growth, 378, 430, 2013 |
| 4 |
InGaP solar cells fabricated using solid-source molecular beam epitaxy Sugaya T, Takeda A, Oshima R, Matsubara K, Niki S, Okano Y Journal of Crystal Growth, 378, 576, 2013 |
| 5 |
Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM Nakano T, Shioda T, Enomoto N, Abe E, Sugiyama M, Nakano Y, Shimogaki Y Journal of Crystal Growth, 347(1), 25, 2012 |
| 6 |
Progress in large area organometallic vapor phase epitaxy for III-V multijunction photovoltaics Fetzer CM, Liu XQ, Chang J, Hong W, Palmer A, Bhusari D, Jun B, Lau M, Lee H Journal of Crystal Growth, 352(1), 181, 2012 |
| 7 |
Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate Ugur A, Hatami F, Masselink WT Journal of Crystal Growth, 323(1), 228, 2011 |
| 8 |
Growth and characterization of sub-wavelength-sized GaInP ridge structures on GaAs substrates Seo JU, Wang XL Journal of Crystal Growth, 324(1), 73, 2011 |
| 9 |
Low temperature growth of Ga1-xInxP bulk crystals from InSb-rich melt Gennett A, Lewis D, Dutta PS Journal of Crystal Growth, 312(8), 1080, 2010 |
| 10 |
Metamorphic growth of tensile strained GaInP on GaAs substrate Toikkanen L, Hakkarainen T, Schramm A, Tukiainen A, Laukkanen P, Guina M Journal of Crystal Growth, 312(21), 3105, 2010 |