화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Silicon carbide crystal and substrate technology: A survey of recent advances
Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH
Materials Science Forum, 457-460, 3, 2004
2 Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport
Wang S, Sanchez EK, Kopec A, Poplawski S, Ware R, Holmes S, Balkas CM, Timmerman AG
Materials Science Forum, 389-3, 35, 2002