1 - 6 |
Processing of PbTiO3 Thin-Films .1. In-Situ Investigation of Formation Kinetics Li CC, Desu SB |
7 - 12 |
Processing of PbTiO3 Thin-Films .2. In-Situ Investigation of Stress-Relaxation Li CC, Desu SB |
13 - 21 |
Processing of PbTiO3 Thin-Films .3. Effects of Ion-Bombardment Li CC, Desu SB |
22 - 29 |
Surface-Diffusion of in on Si(111) - Evidence for Surface-Ionization Effects Allen CE, Ditchfield R, Seebauer EG |
30 - 33 |
Growth of Thin Ti Films on Si(111)-(7X7) Surfaces Saleh AA, Peterson LD |
34 - 37 |
Enhanced Deposition Rate of Lithium Phosphorus Oxynitride Thin-Films by Sputtering of Li3Po4 in N-2-He Gas-Mixtures Bates JB, Yu XH |
38 - 45 |
In-Situ Analysis of the Tribochemical Films Formed by SiC Sliding Against Mo in Partial Pressures of SO2, O-2, and H2S Gases Singer IL, Lemogne T, Donnet C, Martin JM |
46 - 51 |
Superhard Nanocrystalline W2N/Amorphous Si3N4 Composite-Materials Veprek S, Haussmann M, Reiprich S |
52 - 55 |
Contact Potential Measurements of Hard-Disk Drive Surfaces in Humid Environments Zanoria ES, Danyluk S, Zharin AL, Bhatia CS |
56 - 62 |
Structural and Mechanical-Properties of Carbon Nitride Cnx (0.2-Less-Than-or-Equal-to-X-Less-Than-or-Equal-to-0.35) Films Sjostrom H, Hultman L, Sundgren JE, Hainsworth SV, Page TF, Theunissen GS |
63 - 68 |
Optical Multilayer Films Based on an Amorphous Fluoropolymer Chow R, Loomis GE, Ward RL |
69 - 79 |
Surface Chemical-State Populations in the Molecular-Beam Epitaxy Deposition of BaF2 on GaAs by X-Ray Photoelectron-Spectroscopy and Heavy-Ion Backscattering Spectroscopy Stumborg MF, Chu TK, Santiago F, Price JL, Guardala NA, Land DJ |
80 - 88 |
Chemical and Matrix Effects on Sensitivity Factors in Electron Spectroscopies .1. C and Si Containing Materials Ke R, Haasch RT, Finnegan N, Dottl LE, Alkire RC, Farrell HH |
89 - 94 |
Assessment of Overlayer Thickness Determination Model by Controlled Monolayers Beard BC, Brizzolara RA |
95 - 103 |
High-Resolution Electron-Energy-Loss Spectroscopy and Infrared-Spectroscopy of Polymer Surfaces - High-Resolution and Orientation Effects of Polytetrafluoroethylene Films Akavoor P, Menezes W, Kesmodel LL, Apai G, Mckenna WP |
104 - 109 |
Exoelectron Emission from Nickel-Oxide Film and Its Relationship to the Reduction by Ethanol Vapor Momose Y, Iwanami K, Seki J |
110 - 114 |
Excimer-Laser Assisted Growth of Au Thin-Films on Mica(001) Polanski G, Rubahn HG |
115 - 117 |
High-Power Density Pulsed Plasma Deposition of Titanium Carbonitride Yan PX, Yang SZ, Li B, Chen XS |
118 - 124 |
Amorphous Oxygen-Containing Hydrogenated Carbon-Films Formed by Plasma-Enhanced Chemical-Vapor-Deposition Durrant SF, Castro SG, Cisneros JI, Dacruz NC, Demoraes MA |
125 - 131 |
Laser-Induced Dissociation of Molecules During Measurements of Hydrogen-Atoms in Processing Plasmas Using 2-Photon Laser-Induced Fluorescence Miyazaki K, Kajiwara T, Uchino K, Muraoka K, Okada T, Maeda M |
132 - 138 |
Sheath Impedance Effects in Very High-Frequency Plasma-Experiments Schwarzenbach W, Howling AA, Fivaz M, Brunner S, Hollenstein C |
139 - 143 |
Uniformity of Radio-Frequency Bias Voltages Along Conducting Surfaces in a Plasma Stevens JE, Sowa MJ, Cecchi JL |
144 - 151 |
Measurements of Electron-Temperature, Electron-Density, and Neutral Density in a Radiofrequency Inductively-Coupled Plasma Hori T, Bowden MD, Uchino K, Muraoka K, Maeda M |
152 - 155 |
Atomic Nitrogen-Production in a High-Efficiency Microwave Plasma Source Mccullough RW, Geddes J, Croucher JA, Woolsey JM, Higgins DP, Schlapp M, Gilbody HB |
156 - 164 |
X-Ray Photoelectron Study of the Reactive Ion Etching of Sixge1-X Alloys in SF6 Plasmas Peignon MC, Cardinaud C, Turban G, Charles C, Boswell RW |
165 - 169 |
Intrinsic Stress and Its Relaxation in Diamond Film Deposited by Hot-Filament Chemical-Vapor-Deposition Choi SK, Jung DY, Choi HM |
170 - 183 |
Cold-Wall Ultrahigh-Vacuum Chemical-Vapor-Deposition of Doped and Undoped Si and Si1-xGex Epitaxial-Films Using SiH4 and Si2H6 Li C, John S, Quinones E, Banerjee S |
184 - 193 |
Thermooxidative Erosion of Amorphous Hydrogenated Carbon-Films Haasz AA, Chiu S, Pierre JE, Gudimenko YI |
194 - 196 |
Structural-Analysis of Hydrogenated Carbon-Films Obtained by Reactive Direct-Current Magnetron Sputtering Fujimaki S, Matsumoto H, Kokaku Y, Kitoh M, Tsumita N |
197 - 202 |
Further-Studies of Ion-Beam-Assisted Deposition of Si-C Films in Reactive Environments He ZG, Inoue S, Carter G |
203 - 209 |
Ion Incident Angle Dependence of Material Properties of a Zrn Film on Silicon Prepared by the Ion-Assisted Deposition Method Horita S, Akahori H, Kobayashi M |
210 - 215 |
Transmission Electron-Microscopy Investigation of Biaxial Alignment Development in YSZ Films Fabricated Using Ion-Beam-Assisted Deposition Mcintyre PC, Ressler KG, Sonnenberg N, Cima MJ |
216 - 222 |
Interaction of 50 eV Electrons with D2O on GaAs(100) Sloan DW, Sun YM, White JM |
223 - 228 |
A Radiofrequency Bandpass Mass Filter for Broad Ion-Beams Schlemm H |
229 - 233 |
Low-Energy Ar Ion-Induced and Chlorine Ion Etching of Silicon Balooch M, Moalem M, Wang WE, Hamza AV |
234 - 239 |
Neon Ion-Beam-Induced Surface-Reactions of SF6 Adsorbed Molecules with Silicon at Low-Temperature Royer J, Tessier PY, Grolleau B, Turban G |
240 - 244 |
Determination of the Lateral Spread of Xe Ions in Silicon-Nitride and Hydrated Silicon-Nitride Films by Oblique-Incidence Rutherford Backscattering Wang KM, Qu BD, Shi BR, Lu F, Meng MQ, Wang ZL, Wang W, Ding PJ |
245 - 250 |
Application of the Monte-Carlo Method to Pressure Calculation Suetsugu Y |
251 - 255 |
Substrate Effects in Cubic Boron-Nitride Film Formation Mirkarimi PB, Mccarty KF, Cardinale GF, Medlin DL, Ottesen DK, Johnsen HA |
256 - 257 |
Solid-State Ambient-Temperature Ultrahigh-Vacuum Iodine Source Furman SA, Harrington DA |
258 - 259 |
Design of a Magnetron Sputter Source with Soft-X-Ray Monitoring Capabilities Edart S, Dauchot JP |
260 - 265 |
Universal Calibration of W5-Percent-Re vs W26-Percent-Re (Type-C) Thermocouples in the Temperature-Range 32-2588 K Smentkowski VS, Yates JT |