411 - 414 |
Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Han ZJ, Tay BK, Sze JY, Ha PCT |
415 - 420 |
Reduction of thin oxidized copper films using a hot-filament hydrogen radical source Kondoh E, Fukasawa M, Ojimi T |
421 - 424 |
Thermal stability of nonhydrogenated multilayer amorphous carbon prepared by the filtered cathodic vacuum arc technique Teo EHT, Lee ML, Lee CK, Ee CL, Tay BK, Chua DHC |
425 - 431 |
Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO3 films in Ar/SF6 plasmas Stafford L, Langlois O, Margot J, Gaidi M, Chaker M |
432 - 436 |
Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma Mukai T, Hshirna N, Hada H, Samukawa S |
437 - 440 |
Infrared absorber for pyroelectric detectors Thompson MP, Troxell JR, Murray ME, Thrush CM, Mantese JV |
441 - 447 |
Identification of important growth parameters for the development of high quality Alx > 0.5Ga1-xN grown by metal organic chemical vapor deposition Grandusky JR, Jamil M, Jindal V, Tripathi N, Shahedipour-Sandvik F |
448 - 454 |
Fluorine content of SiOF films as determined by IR spectroscopy and resonant nuclear reaction analysis Alonso JC, Diaz-Bucio M, Ortiz A, Benami A, Cheang-Wong JC, Rodriguez-Fernandez L |
455 - 463 |
Electron and ion kinetics in magnetized capacitively coupled plasma source Lee SH, You SJ, Chang HY, Lee JK |
464 - 467 |
Structural and electrical characteristics of microcrystalline silicon prepared by hot-wire chemical vapor deposition using a graphite filament Adachi MM, Kavanagh KL, Karim KS |
468 - 473 |
NiCr etching in a reactive gas Ritter J, Boucher R, Morgenroth W, Meyer HG |
474 - 479 |
Zinc deposition experiments for. validation of direct-simulation Monte Carlo calculations of rarefied internal gas flows Dorsman R, Kleijn CR, Velthuis JFM, Zijp JP, van Mol AMB |
480 - 484 |
Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O-2(+) bombardment of organic materials Harton SE, Zhu ZM, Stevie FA, Griffis DP, Ade H |
485 - 491 |
Effects of the deposition parameters on the growth of ultrathin and thin SiO2 films Quartarone E, Mustarelli P, Grandi S, Marabelli F, Bontempi E |
492 - 499 |
Sputter deposited electroluminescent zinc sulfide thin films doped with rare earths Glass W, Kale A, Shepherd N, Davidson M, DeVito D, Holloway PH |
500 - 507 |
Coverage dependent reaction of yttrium on silicon and the oxidation of yttrium silicide investigated by x-ray photoelectron spectroscopy Chiam SY, Chim WK, Huan ACH, Zhang J, Pan JS |
508 - 513 |
Radiative wafer heating during plasma deposition process Bosch RCM, Kant CH, van Erven AJM, Stals WTM, Bijker MD |
514 - 526 |
Ferntomolar isothermal desorption using microhotplate sensors Shirke AG, Cavicchi RE, Semancik S, Jackson RH, Frederick BG, Wheeler MC |
527 - 531 |
Improvement of corrosion resistance of transparent conductive multilayer coating consisting of silver layers and transparent metal oxide layers Koike K, Yamazaki F, Okamura T, Fukuda S |
532 - 535 |
Enhancement of thermal stability of Ta/Si(100) film by a Ta-Si interlayer Ahn DC, Lee HH, Kim SS, Kim TC, Noh DY, Kim DH |
536 - 542 |
Compound semiconductor bonded to AlN heat spreader substrate using graded intermediate layer Jagannadham K |
543 - 550 |
Combined filtered cathodic arc etching pretreatment-magnetron sputter deposition of highly adherent CrN films Ehiasarian AP, Anders A, Petrov I |
551 - 556 |
Residence times of water molecules on stainless steel and aluminum surfaces in vacuum and atmosphere Dobrozemsky R, Menhart S, Buchtela K |
557 - 565 |
Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering Khanna A, Bhat DG |
566 - 569 |
Role of surface tension in copper electroplating Chang SC, Wang YL, Hung CC, Lee WH, Hwang GJ |
570 - 574 |
Sealing ultralow kappa porous dielectrics with thin boron carbonitride films Ahearn WJ, Fitzpatrick PR, Ekerdt JG |
575 - 586 |
Resonant soft x-ray reflectivity of organic thin films Wang C, Araki T, Watts B, Harton S, Koga T, Basu S, Ade H |
587 - 591 |
Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle Martin-Palma RJ, Ryan JV, Pantano CG |
592 - 596 |
Effects of in situ N-2 plasma treatment on etch of HfO2 in inductively coupled Cl-2/N-2 plasmas Lin C, Leou KC, Fan YC, Li TC, Chang KH, Lee LS, Tzeng PJ |
597 - 600 |
Measurement and prediction of H2O outgassing kinetics from silica-filled polydimethylsiloxane TR55 and S5370 Dinh LN, Burnham AK, Schildbach MA, Smith RA, Maxwell RS, Balazs B, McLean W |
601 - 606 |
Optimization of the incident angle in infrared spectroscopic ellipsometry: Spectra of C-18-alkylthiol monolayers Hu ZG, Hess P |
607 - 614 |
Measurement and modeling of time- and spatial-resolved wafer surface temperature in inductively coupled plasmas Hsu CC, Titus MJ, Graves DB |
615 - 620 |
Photosynthesis and structure of electroless Ni-P films by synchrotron x-ray irradiation Hsu PC, Wang CH, Yang TY, Hwu YK, Lin CS, Chen CH, Chang LW, Seol SK, Je JH, Margaritondo G |
621 - 625 |
Quantifying the flux and spatial distribution of atomic hydrogen generated by a thermal source using atomic force microscopy to measure the chemical erosion of highly ordered pyrolytic graphite Wnuk JD, Gorham JM, Smith BA, Shin M, Fairbrother DH |
626 - 627 |
Simple versatile vacuum feedthrough Armstrong RJ |
628 - 628 |
CF16 differentially pumped window for ultrahigh vacuum applications Asvany O, Hugo E, Schlemmer S |
629 - 630 |
Simple designs to avoid high-voltage discharge in a silicon electron beam-heating cell Wang KF, Shen ZL, Xu PS, Pan HB, Zou CW, Liu JF |