Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.16, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (63 articles)

2751 - 2756	Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H-2 Jagannathan BB, Wallace RL, Anderson WA
2757 - 2761	Plasma assisted chemical vapor deposition silicon oxynitride films grown from SiH4+NH3+O-2 gas mixtures Olivares-Roza J, Sanchez O, Albella JM
2762 - 2767	Plasma deposition chemistry of amorphous silicon-carbon alloys from fluorinated gas Cicala G, Bruno G, Capezzuto P
2768 - 2771	Preparation of high quality RuO2 electrodes for high dielectric thin films by low pressure metal organic chemical vapor deposition Lee JM, Shin JC, Hwang CS, Kim HJ, Suk CG
2772 - 2776	Etching properties of Pt thin films by inductively coupled plasma Kwon KH, Kim CI, Yun SJ, Yeom GY
2777 - 2784	Characterization and modeling of a Helicon plasma source Cheetham AD, Rayner JP
2785 - 2790	Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition Rosenblad C, Deller HR, Dommann A, Meyer T, Schroeter P, von Kanel H
2791 - 2793	High growth rate GaN films using a modified electron cyclotron resonance plasma source Berishev I, Kim E, Bensaoula A
2794 - 2803	Bow temperature plasma deposition of silicon nitride from silane and nitrogen plasmas Hanyaloglu BF, Aydil ES
2804 - 2815	Structural characteristics of AIN films deposited by pulsed laser deposition and reactive magnetron sputtering : A comparative study Jagannadham K, Sharma AK, Wei Q, Kalyanraman R, Narayan J
2816 - 2826	Plasma diagnostics in a triode ion plating system Wouters S, Kadlec S, Quaeyhaegens C, Stals LM
2827 - 2831	Twin-source plasma chemical vapor deposition for high rate deposition of SiO2 films Nonogaki R, Nakai S, Yamada S, Wada T
2832 - 2839	New-type microwave plasma source excited by azimuthally symmetric surface waves with magnetic multicusp fields Tuda M, Ono K
2840 - 2844	Hydrocarbon plasma polymerized coatings Benardais A, Leprince P, Zielinski F, Floch H
2845 - 2850	Deposition of molybdenum thin films by an alternate supply of MoCl5 and Zn Juppo M, Vehkamaki M, Ritala M, Leskela M
2851 - 2857	Structure, mechanical and tribological properties of Ti-B-N and Ti-Al-B-N multiphase thin films produced by electron-beam evaporation Rebholz C, Ziegele H, Leyland A, Matthews A
2858 - 2869	Development of a novel structure zone model relating to the closed-field unbalanced magnetron sputtering system Kelly PJ, Arnell RD
2870 - 2875	Optical and electronic properties of sputtered TiNx thin films Schmid PE, Sunaga MS, Levy F
2876 - 2884	Growth and characterization of radio-frequency magnetron sputtered lead zirconate titanate thin films deposited on < 111 > Pt electrodes Ea-Kim B, Aubert P, Ayguavives F, Bisaro R, Varniere F, Olivier J, Puech M, Agius B
2885 - 2889	Proposal for a new UV-light generating device based on cold electron emission Nicolaescu D, Filip V, Okuyama F
2890 - 2895	X-ray photoelectron spectroscopy study of the heating effects on Pd/6H-SiC Schottky structure Chen LY, Hunter GW, Neudeck PG, Knight D
2896 - 2900	Surface composition of BN, CN, and BCN thin films Tempez A, Badi N, Bensaoula A, Kulik J
2901 - 2912	Reversible and irreversible control of optical properties of porous silicon superlattices by thermal oxidation, vapor adsorption, and liquid penetration Zangooie S, Jansson R, Arwin H
2913 - 2918	Structure and mechanical properties of polycrystalline CrN/TiN superlattices Yashar P, Barnett SA, Rechner J, Sproul WD
2919 - 2925	Blistering mechanism for the crater formation at Ta/Si interface by sputtering with oxygen ion beam Kim KJ, Moon DW, Jung KH
2926 - 2930	Optical properties of titania/silica multilayer filters prepared by helicon plasma sputtering Wang X, Masumoto H, Someno Y, Hiral T
2931 - 2940	Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition Landheer D, Rajesh K, Masson D, Hulse JE, Sproule GI, Quance T
2941 - 2949	Electronic structure of hydrogenated carbon nitride films Hammer P, Victoria NM, Alvarez F
2950 - 2955	Can photoemission accurately probe the bulk electronic structure of the complex oxides? Choi JW, Waldfried C, Liou SH, Dowben PA
2956 - 2960	In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber Hiroyama Y, Tamura M
2961 - 2966	Thermal desorption spectroscopy study of native and electron irradiated glycine overlayers on graphite(0001) Lofgren P, Krozer A, Chakarov DV, Kasemo B
2967 - 2973	Scanning tunneling microscopy study of Fe(CO)(5) and Fe(C5H5)(2) adsorption on Si(111)7x7 and B/Si(111)root 3x root 3 Thibaudau F, Masson L, Chemam A, Roche JR, Salvan F
2974 - 2978	Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4 Hirose F, Sakamoto H
2979 - 2989	Quantitative characterization of a highly effective atomic hydrogen doser Eibl C, Lackner G, Winkler A
2990 - 2994	Surfactant and ordering effects of arsenic interlayers at the Pb/InP(110) interface Schomann S, Chasse T
2995 - 3005	Thermal and electron-driven chemistry of CCl4 on clean and hydrogen precovered Si(100) Junker KH, Hess G, Ekerdt JG, White JM
3006 - 3019	Energetic ion bombardment of SiO2 surfaces : Molecular dynamics simulations Abrams CF, Graves DB
3020 - 3024	Micro-Raman study of reactive pulsed laser ablation deposited silicon carbon alloy films Trusso S, Vasi C, Barreca F, Neri F
3025 - 3028	Holographic imaging of macromolecules Golzhauser A, Volkel B, Jager B, Zharnikov M, Kreuzer HJ, Grunze M
3029 - 3033	Symmetry of, and polarized-laser-induced reactions on, Si (111) Cl2 surfaces studied by second-harmonic generation Haraichi S, Sasaki F
3034 - 3040	Interactions of methanol with stoichiometric and defective TiO2(110) and (100) surfaces Wang LQ, Ferris KF, Winokur JP, Shultz AN, Baer DR, Engelhard MH
3041 - 3045	Study of the reactions of Li with tetrahydrofuran and propylene carbonate by photoemission spectroscopy Zhuang GR, Wang K, Chen Y, Ross PN
3046 - 3051	Surface composition and morphology of polyimidesiloxane copolymers with short polydimethylsiloxane segments studied by electron spectroscopy for chemical analysis and time-of-flight secondary ion mass spectrometry Zhao J, Rojstaczer SR, Gardella JA
3052 - 3057	Generation of optical absorption bands in CaF2 single crystals by ArF excimer laser irradiation : Effect of yttrium impurity Mizuguchi M, Hosono H, Kawazoe H, Ogawa T
3058 - 3063	Application of pulsed-laser deposition technique for cleaning a GaAs surface and for epitaxial ZnSe film growth Ryu YR, Zhu S, Han SW, White HW
3064 - 3067	Surface-mediated reaction pathways of 2,4-pentanedione on clean and oxygen covered Cu (210) Nigg HL, Ford LP, Masel RI
3068 - 3075	Doping effects and reversibility studies on gas-exposed alpha-sexithiophene thin films Kendrick C, Semancik S
3076 - 3079	Diffusion behavior study of Yb+ and Er+ implanted into polyimide (C22H10N2O5)(n) Wang KM, Lu F, Meng MQ, Huang MB, Wu B, Li W, Liu XD, Liu JT
3080 - 3083	Meeting the process challenges for spin-valve fabrication on an industrial scale Schwartz PV, Bubber R, Paranjpe AP, Kools JCS
3084 - 3087	Pumping properties using an electrolytic polished stainless steel vacuum chamber Watanabe S, Kurokouchi S, Aono M
3088 - 3095	Substrate dependence of adlayer optical response in reflectance anisotropy spectroscopy Cole RJ, Frederick BG, Weightman P
3096 - 3103	On the nature of the rate limiting step in the reaction of cracking water molecules on a metallic surface Ghezzi F
3104 - 3113	Nanoindentation hardness, abrasive wear, and microstructure of TiN/NbN polycrystalline nanostructured multilayer films grown by reactive magnetron sputtering Ljungcrantz H, Engstrom C, Hultman L, Olsson M, Chu X, Wong MS, Sproul WD
3114 - 3118	Atmospheric permeation of austenitic stainless steel Moore BC
3119 - 3122	Noncontact method for measuring coefficient of linear thermal expansion of thin films Rafla-Yuan H, Hichwa BP, Allen TH
3123 - 3126	Deposition rate dependence of step coverage of sputter deposited aluminum-(1.5%) copper films Taylor DS, Jain MK, Cale TS
3127 - 3130	Detection of trace nitrogen in bulk argon using proton transfer reactions Hunter EJ, Homyak AR, Ketkar SN
3131 - 3133	Gas-phase esterification during plasma polymerization of propanoic acid and 1-propanol Beck AJ, Short RD
3134 - 3137	Growth of microcrystalline silicon film by electron beam excited plasma chemical vapor deposition without hydrogen dilution Imaizumi M, Okitsu K, Yamaguchi M, Hara T, Ito T, Konomi I, Ban M, Tokai M, Kawamura K
3138 - 3141	Diamond nucleation on nonscratched Si substrate pretreated by pulsed high-temperature and high-density CH4-plasma beam Jiang YB, Zhang HX, Liu CZ, Liu B, Lin ZD, Wu C, Yang SZ
3142 - 3144	Study on TiNx films and Ti target surface nitrided by rf dc coupled reactive magnetron sputtering Suzuki M, Tanaka T, Kawabata K
3145 - 3147	Phase-shift interference microscope employing a simple method to depress speckle noises for the thickness measurement of thin films Matsumoto S, Takayama K, Toyooka S, Kikuchi A
3148 - 3148	Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with one micron thick oxide layers (vol 16, pg 1825, 1998) Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS