Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (45 articles)

1 - 6	Scanning tunneling microscopy studies of formation of 8x5 reconstructed structure of Ga on the Si(001) surface Nakada Y, Aksenov I, Okumura H
7 - 11	Scanning tunneling microscopy study of the adsorption of toluene on Si(001) Borovsky B, Krueger M, Ganz E
12 - 21	Evidence for liquid indium nanoparticles on Ge(001) at room temperature Bottomley DJ, Iwami M, Uehara Y, Ushioda S
22 - 28	Optical system for tunneling-electron luminescence spectro/microscopes with conductive-transparent tips in ultrahigh vacuums Murashita T
29 - 32	Scanning tunneling microscope-induced luminescence of GaN at threading dislocations Evoy S, Craighead HG, Keller S, Mishra UK, DenBaars SP
33 - 39	Area evaluation of microscopically rough surfaces Lai L, Irene EA
40 - 43	Application of advanced micromachining techniques for the characterization and debug of high performance microprocessors Livengood RH, Winer P, Rao VR
44 - 48	Nitrogen influence on dangling-bond configuration in silicon-rich SiOx : N,H thin films Pivac B, Rakvin B, Borghesi A, Sassella A, Bacchetta M, Zanotti L
49 - 52	Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures Passlack M, Yu Z, Droopad R, Bowers B, Overgaard C, Abrokwah J, Kummel AC
53 - 59	A study of the relationship between Si/SiO2 between interface charges and roughness Lai L, Hebert KJ, Irene EA
60 - 67	Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy Halder NC, Goodman T
68 - 72	Numerical modeling of electron transport in a cylindrical cell Fedirko VA, Belova NG
73 - 76	Effect of light exposure on 1/f noise in a-Si : H Johanson RE, Scansen D, Kasap SO
77 - 81	Fabrication technology of ultrafine SiO2 masks and Si nanowires using oxidation of vertical sidewalls of a poly-Si layer Tsutsumi T, Tomizawa K, Ishii K, Kanemaru S, Maeda T, Suzuki E
82 - 85	Tandem accel lens advantageous in producing a small spot focused ion beam Nomura S
86 - 89	Nanolithography using a 100 kV electron beam lithography system with a Schottky emitter Kamp M, Emmerling M, Kuhn S, Forchel A
90 - 94	Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene Bartlett B, Buckley LJ, Godbey DJ, Schroeder MJ, Fontenot C, Eisinger S
95 - 100	Observations on the formation and ashing of giant folds in high dose ion-implanted resists Vinogradov GK, Menagarishvili VM
101 - 108	Environmental stability of 193 nm single layer chemically amplified resists Timko AG, Houlihan FM, Cirelli RA, Nalamasu O, Yoshino H, Itani T, Tanabe H, Kasama K
109 - 112	High-resolution resist etching for quartermicron lithography using O-2/N-2 supermagnetron plasma Kinoshita H, Yamauchi A, Sawai M
113 - 117	Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine- and chlorine-based reactive-ion etching Smith CJM, Murad SK, Krauss TF, De la Rue RM, Wilkinson CDW
118 - 126	Parametric study of the etching of SiO2 in SF6 plasmas: Modeling of the etching kinetics and validation Lagarde T, Pelletier J, Arnal Y
127 - 137	Kinetics of etch products and reaction process in electron cyclotron resonance plasma etching of Si Nishikawa K, Oomori T, Ono K
138 - 144	Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl-2/BCl3/Ar plasmas Nordheden KJ, Hua XD, Lee YS, Yang LW, Streit DC, Yen HC
145 - 153	Optimal design using neural network and information analysis in plasma etching Chen JH, Chu PPT, Wong DSH, Jang SS
154 - 157	Dry etching of copper film with hexafluoroacetylacetone via oxidation process Kang SW, Kim HU, Rhee SW
158 - 161	Contact hole model for etch depth dependence Abraham-Shrauner B
162 - 165	Ex situ formation of oxide-interlayer-mediated-epitaxial CoSi2 film using Ti capping Kim GB, Kwak JS, Baik HK, Lee SM
166 - 173	Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization Shalish I, Shapira Y
174 - 181	Role of cerium dioxide in a tantalum diffusion barrier film for a Cu/Ta+CeO2/Si structure Yoon DS, Baik HK, Lee SM
182 - 185	Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization Chen XM, Frisch HL, Kaloyeros AE, Arkles B, Sullivan J
186 - 193	Integrating system and feature scale models to study copper reflow Friedrich LJ, Dew SK, Brett MJ, Smy T
194 - 200	Optimized cleaning and conditioning of a five station tetrakis diethylamido titanium chemical vapor deposition TiN chamber Whelan CS, Bulger JM, Dumont A, Clark J, Kuhn M
201 - 204	Dielectric characteristics of a metal-insulator-metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride films Maeda M, Yamamoto E, Ohfuji S, Itsumi M
205 - 212	Surface modified spin-on xerogel films as interlayer dielectrics Nitta SV, Pisupatti V, Jain A, Wayner PC, Gill WN, Plawsky JL
213 - 216	Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Park JW, Hwang KH, Yoon EJ
217 - 223	Patterned regrowth of n-GaAs by molecular beam epitaxy using arsenic passivation Heinlein C, Fimland BO, Grepstad JK, Berge T
224 - 229	Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II-VI semiconductors using negative cluster ions Zhao J, Na MH, McKeown PJ, Chang HC, Lee EH, Luo H, Chen JX, Wood TD, Gardella JA
230 - 232	Multilayer technique for fabricating Nb junction circuits exhibiting charging effects Pavolotsky AB, Weimann T, Scherer H, Krupenin VA, Niemeyer J, Zorin AB
233 - 236	Surface chemical changes on field emitter arrays due to device aging Wei Y, Chalamala BR, Smith BG, Penn CW
237 - 240	Field emission properties of BN coated Si tips by pulsed ArF laser deposition Jayatissa AH, Sato F, Saito N, Sawada K, Masuda T, Nakanishi Y
241 - 245	Preparation of N-doped hydrogen-free diamondlike carbon and its application to field emitters Moon JH, Chung SJ, Han FJ, Jang J, Jung JH, Ju BK, Oh MH
246 - 249	Enhancement of emission characteristics for field emitters by N-doped hydrogen-free diamond-like-carbon coating Kang HK, Kim TH, Moon S, Jung JH, Oh MH
250 - 252	Simulation of diamond-film field emission microtetrodes Zeng BQ, Yang ZH
253 - 256	Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy Thibado PM, Salamo GJ, Baharav Y