Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (50 articles)

2335 - 2338	Study of aniline on a Si(111)7X7 surface by scanning tunneling microscopy Tomimoto H, Sumii R, Shirota N, Yagi S, Taniguchi M, Sekitani T, Tanaka K
2339 - 2343	Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope Shklyaev AA, Shibata M, Ichikawa M
2344 - 2350	Nanometer-scale Si selective epitaxial growth on Au-adsorbed Si(111) surface windows in ultrathin oxide films Shibata M, Nitta Y, Fujita K, Ichikawa M
2351 - 2358	Growth and characterization of Au clusters on alkanethiol self-assembled monolayers Wang B, Xiao XD, Sheng P
2359 - 2364	Molecular approach toward information storage based on the redox properties of porphyrins in self-assembled monolayers Roth KM, Dontha N, Dabke RB, Gryko DT, Clausen C, Lindsey JS, Bocian DF, Kuhr WG
2365 - 2370	Coulomb staircases by lateral tunneling between adjacent nanoclusters formed on Si surfaces Park KH, Ha JS, Yun WS, Shin M, Ko YJ
2371 - 2376	Atomic scale Ph chains on Si(100) Dong ZC, Fujita D, Yakabe T, Sheng HY, Nejoh H
2377 - 2383	Nanoscale surface modification and nanostructural fabrication of YBa2Cu3O7-x thin films by scanning tunneling microscopy Fan YC, Fitzgerald AG, Cairns JA
2384 - 2387	Scanning tunneling microscopy studies of ultrathin gate oxide films grown on highly B-doped Si(100) substrates Cai Q, Hu YF, Hu ST, Wang X
2388 - 2394	Theoretical and experimental investigation of ultrathin oxynitrides and the role of nitrogen at the Si-SiO2 interface Demkov AA, Liu R, Zhang XD, Loechelt H
2395 - 2400	Proposal and dynamics simulation of scanning tunneling microscope with a giant magnetostrictive alloy Sakuta S
2401 - 2405	Morphological investigation of ultrathin Ag and Ti films grown on hydrogen terminated Si(111) Gergen B, Nienhaus H, Weinberg WH, McFarland EM
2406 - 2410	Effect of deposition and treatment conditions on growth of nanometer PtSi heterostructure Wang PL, Yin JH, Sheng WB, Zheng YF, Zhao LC, Xu DM
2411 - 2414	Surface-enhanced photoemission in Schottky diodes with microrelief interfaces Dmitruk NL, Mamykin SV
2415 - 2419	Investigation of the electron emission from pores in a diamond porous membrane Mammana VP, Anders S, Monteiro OR, Salvadori MC
2420 - 2423	Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer Mao DS, Wang X, Li W, Liu XH, Li Q, Xu JF, Okano K
2424 - 2426	Thermal stability in diamond-like carbon coated planar electron field emission arrays Lin CM, Chang SJ, Yokoyama M, Lin IN
2427 - 2432	Development of edge field emission cold cathodes based on low work function Cu-Li alloy coatings Tucek JC, Krauss AR, Gruen DM, Auciello O, Moldovan N, Mancini DC, Zurn S, Polla D
2433 - 2440	Chemical vapor deposition of fluoroalkylsilane monolayer films for adhesion control in microelectromechanical systems Mayer TM, de Boer MP, Shinn ND, Clews PJ, Michalske TA
2441 - 2445	Gas-sensing device implemented on a micromachined membrane: A combination of thick-film and very large scale integrated technologies Vincenzi D, Butturi MA, Guidi V, Carotta MC, Martinelli G, Guarnieri V, Brida S, Margesin B, Giacomozzi F, Zen M, Giusti D, Soncini G, Vasiliev AA, Pisliakov AV
2446 - 2451	Fabrication and characterization of a micromachined 5 mm inductively coupled plasma generator Hopwood J, Minayeva O, Yin Y
2452 - 2456	Planar integration of heterojunction bipolar transistors and resonant tunneling diodes Thomas S, Chow DH, Kizilogu K, Fields CH, Madhav M, Arthur A
2457 - 2462	Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy Dey S, Pradhan A, Varma S
2463 - 2471	Integration of chemical vapor deposition Al interconnects in a benzocyclobutene low dielectric constant polymer matrix: A feasibility study Wickland H, Talevi R, Bian ZL, Nuesca G, Sankaran S, Kumar K, Geer RE, Kaloyeros AE, Liu J, Hummel J, Shaffer EO, Martin SJ
2472 - 2476	Fractality aspects during agglomeration of solid-phase-epitaxy Co-silicide thin films Palasantzas G, De Hosson JTM
2477 - 2481	Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC Shalish I, Shapira Y
2482 - 2485	Trench formation and filling technique for dielectric isolation of plasma display panel driver integrated circuits Kim SG, Kim J, Koo JG, Nam KS, Cho KI, Bae IH
2486 - 2490	Formation of silicon nitride gate dielectric films at 300 degrees C employing radical chemical vapor deposition Ohta H, Nagashima A, Ito M, Hori M, Goto T
2491 - 2494	Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma Basak D, Fareed Q, Nishino K, Sakai S
2495 - 2499	Pulse-time-modulated inductively coupled plasma etching for high-performance polysilicon patterning on thin gate oxides Ohtake H, Noguchi K, Samukawa S, Iida H, Sato A, Qian XY
2500 - 2504	Use of orthogonal polynomial functions for endpoint detection during plasma etching of patterned wafers Rietman EA, Layadi N, Downey SW
2505 - 2508	Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess Lee YS, Upadhyaya K, Nordheden KJ, Kao MY
2509 - 2512	Dry via hole etching of GaAs using high-density Cl-2/Ar plasma Chen YW, Ooi BS, Ng GI, Radhakrishnan K, Tan CL
2513 - 2517	Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers Cordier Y, Chauveau JM, Ferre D, Dipersio J
2518 - 2522	Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors Guyer JE, Tseng WF, Pellegrino JG
2523 - 2526	Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage Wang XQ, Du GT, Jin Z, Li MT, Yin JZ, Li ZT, Liu SY, Yang SR
2527 - 2533	Crack formation in tensile InGaAs/InP layers Natali M, De Salvador D, Berti M, Drigo AV, Lazzarini L, Salviati G, Rossetto G, Torzo G
2534 - 2542	Plasma polymerized methylsilane I: Characterization of thin photosensitive films for advanced lithography applications Monget C, Joubert O, Inglebert RL
2543 - 2550	The effect of photoacid generator structure on deep ultraviolet resist performance Ablaza SL, Cameron JF, Xu GY, Yueh W
2551 - 2559	Study of the fundamental contributions to line edge roughness in a 193 nm, top surface imaging system Somervell MH, Fryer DS, Osborn B, Patterson K, Byers J, Willson CG
2560 - 2564	SCALPEL aerial image monitoring: Principles and application to space charge Gallatin GM, Farrow RC, Liddle JA, Waskiewicz WK, Mkrtchyan MM, Orphanos P, Felker J, Kraus J, Biddick CJ, Stanton S, Novembre AE, Blakey M
2565 - 2568	Preparation of low-reflectivity aluminum film using direct current magnetron sputtering in Ar/O-2 and Ar/N-2 atmospheres Kamoshida K
2569 - 2572	Sulfur passivation of Ga2O3(Gd2O3)/GaAs metal-oxide-semiconductor structures Eftekhari G
2573 - 2575	Nanobubbles on solid surface imaged by atomic force microscopy Lou ST, Ouyang ZQ, Zhang Y, Li XJ, Hu J, Li MQ, Yang FJ
2576 - 2578	Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source Kim GB, Kwak JS, Baik HK, Lee SM
2579 - 2582	In situ cleaning of microfabricated field emitter cathodes Schwoebel PR, Olson RT, Panitz JA, Brodie AD
2583 - 2589	Through-wafer electrical interconnect for multilevel microelectromechanical system devices Mehra A, Zhang X, Ayon AA, Waitz IA, Schmidt MA
2590 - 2592	Scanning tunneling spectroscopy characterization of As+ implanted InP (100) single crystals Ichizli V, Riemenschneider R, Hartnagel HL
2593 - 2596	Simulations of a two-junction system with non-Ohmic tunnel junctions for high- and low-impedance environments Nakashima H, Uozumi K
2597 - 2602	Design of compression shrink-fit ceramic - steel wear ring assembly for chemical mechanical planarization Lougher W, Vondra L