1 - 5 |
ZnSxSe1-x heteroepitaxial growth on GaP by metalorganic vapor phase epitaxy Lee MK, Hong CW, Wei SJ, Chang YR |
6 - 9 |
The formation conditions of carbon nanotubes array based on FeNi alloy island films Chen XH, Feng SQ, Ding Y, Peng JC, Chen ZZ |
10 - 18 |
Structural, compositional and photoluminescence characteristics of CuInSe2 thin films prepared by close-spaced vapor transport Zouaoui A, Lachab M, Hidalgo ML, Chaffa A, Llinares C, Kesri N |
19 - 33 |
On the low pressure transformation of graphite to diamond in the presence of a'catalyst-solvent' Mallika K, DeVries RC, Komanduri R |
34 - 37 |
Preparation of nitrogen-containing carbon films by electrolysis of organic solutions Shen MR, Gan ZQ, Ge SB, Xin Y, Ji MR |
38 - 43 |
Carbon nitride thin films prepared by nitrogen ion assisted pulsed laser deposition of graphite using KrF excimer laser Yamamoto K, Koga Y, Fujiwara S, Kokai F, Kleiman JI, Kim KK |
44 - 50 |
CuInSe2 films produced by graphite box annealing of multilayer precursors Kundu SN, Basu M, Chaudhuri S, Pal AK |
51 - 57 |
Growth and microstructure of Si/CaF2/Si(111) heterostructures Gribelyuk MA, Wilk GD |
58 - 67 |
Pulsed photothermal modeling of composite samples based on transmission-line theory of heat conduction Chen G, Hui P |
68 - 73 |
Thickness dependence of the anisotropy in thermal expansion of PMDA-ODA and BPDA-PDA thin films Liou HC, Ho PS, Stierman R |
74 - 77 |
Electrical properties of nitrogen incorporated tetrahedral amorphous carbon films Chen ZY, Yu YH, Zhao JP, Yang SQ, Shi TS, Liu XH, Luo EZ, Xu JB, Wilson IH |
78 - 81 |
Phase change of sputtered LaNi5 thin films due to hydrogenation Huang L, Gong H, Gao W |
82 - 87 |
Voltammetric studies at the polycrystalline diamond grown over a graphite electrode material Ramesham R |
88 - 94 |
Self-shadowing and surface diffusion effects in obliquely deposited thin films Vick D, Friedrich LJ, Dew SK, Brett MJ, Robbie K, Seto M, Smy T |
95 - 101 |
Structural analysis of Co-Cr alloy films by X-ray diffraction Zhou ZF, Fan YD |
102 - 108 |
Characterization of laser ablated silicon thin films Viayalakshmi S, Iqbal Z, George MA, Federici J, Grebel H |
109 - 113 |
The sol-gel preparation and AFM study of spinel CoFe2O4 thin film Cheng FX, Peng ZY, Xu ZG, Liuao CS, Yan CH |
114 - 116 |
Pulsed laser deposition of ilmenite FeTiO3 epitaxial thin film onto sapphire substrate Dai ZN, Zhu PR, Yamamoto S, Miyashita A, Narum K, Naramoto H |
117 - 119 |
AlN films grown by electric field induced flux of Al cations Johnson MT, Carter CB |
120 - 122 |
Vapor polymerization deposition of new polyamide thin films having oligothiophene segments in the main chain Muguruma H, Yudasaka M, Hotta S |
123 - 128 |
Sol-gel preparation of Ti1-xVxO2 solid solution film electrodes with conspicuous photoresponse in the visible region Zhao GL, Kozuka H, Lin H, Yoko T |
129 - 136 |
Metastable phase diagram of Ti-Si-N(O) films (C-Si < 30 at.%) Shalaeva EV, Borisov SV, Denisov OF, Kuznetsov MV |
137 - 141 |
Morphological and spectroscopic studies of thin films of quaterthiophenes having extra bulky terminal groups Muguruma H, Hotta S |
142 - 147 |
Tailoring of a smooth polycrystalline gold surface as a suitable anchoring site for a self-assembled monolayer Tsuneda S, Ishida T, Nishida N, Hara M, Sasabe H, Knoll W |
148 - 153 |
A study of the effects of ammonium salts on chemical bath deposited zinc sulfide thin films Oladeji IO, Chow L |
154 - 159 |
Influence of single-source precursors on PACVD-derived boron carbonitride thin films Hegemann D, Riedel R, Oehr C |
160 - 164 |
Thermal characterization of anisotropic thin dielectric films using harmonic Joule heating Ju YS, Kurabayashi K, Goodson KE |
165 - 173 |
Solid single-source metal organic chemical vapor deposition of yttria-stabilized zirconia Dubourdieu C, Kang SB, Li YQ, Kulesha G, Gallois B |
174 - 180 |
Prospects for IR emissivity control using electrochromic structures Hale JS, Woollam JA |
181 - 186 |
Methods to investigate mechanical properties of coatings Loffler F |
187 - 193 |
Growth by molecular beam epitaxy and characterization of CaF2 : Pr3+ planar waveguides Balaji T, Lifante G, Daran E, Legros R, Lacoste G |
194 - 199 |
Crystallization behavior of rf-sputtered TiNi thin films Chen JZ, Wu SK |
200 - 202 |
Growth of AlN films using hydrazidoalane single-source precursors Kim Y, Kim JH, Park JE, Bae BJ, Kim B, Park JT, Yu KS, Kim Y |
203 - 208 |
Phase transition and properties of Ti-Al-N thin films prepared by rf-plasma assisted magnetron sputtering Zhou M, Makino Y, Nose M, Nogi K |
209 - 215 |
Nanometer pores in ultrathin silica films prepared by self-assembly of organic spacers in an alkylsiloxane monolayer Singh S, Sasaki DY, Cesarano J, Hurd AJ |
216 - 219 |
An ellipsometric study of W thin films deposited on Si Deineka AG, Tarasenko AA, Jastrabik L, Chvostova D, Bousek J |
220 - 224 |
Surface OH group governing adsorption properties of metal oxide films Takeda S, Fukawa M, Hayashi Y, Matsumoto K |
225 - 232 |
Positive-ionic and neutral-molecular desorptions by temperature-programmed heating of a thin film of lithium bromide Zhu YF, Maeda T, Kawano H |
233 - 239 |
Interaction of copper(I)-polypyrrole complexes prepared by depositing-dissolving copper onto and from polypyrroles Liu YC, Hwang BJ |
240 - 248 |
Properties of aluminium oxide thin films deposited by reactive magnetron sputtering Koski K, Holsa J, Juliet P |
249 - 257 |
Spring constants of composite ceramic/gold cantilevers for scanning probe microscopy Hazel JL, Tsukruk VV |
258 - 264 |
Nanomechanical measurements on polymers using contact mode atomic force microscopy Lemoine P, McLaughlin JM |
265 - 269 |
Field-effect-transistor and real-space-transfer behaviors by double-heterojunction doped channel Lia CY, Lour WS, Hsieh JL |
270 - 276 |
Feature scale simulation of selective chemical vapor deposition process Yun JH, Rhee SW |
277 - 283 |
Fabrication and characterization of heteropolyanion Langmuir-Blodgett films Liu S, Tang Z, Wang E, Dong S |
284 - 289 |
Formation of ultra-thin ceramic TiO2 films by the Langmuir-Blodgett technique - a two-dimensional sol-gel process at the air-water interface Oswald M, Hessel V, Riedel R |
290 - 293 |
Characteristics of TiN barrier layer against Cu diffusion Kwak MY, Shin DH, Kang TW, Kim KN |
294 - 298 |
The bistable switching property of a porous-silicon Schottky barrier diode during the charging period Lue JT, Chang CS, Chen CY, Huang WC |
299 - 304 |
The crystal structure of CdS-CdTe thin film heterojunction solar cells Rogers KD, Painter JD, Healy MJ, Lane DW, Ozsan ME |
305 - 308 |
Effect of precipitates on phase transformation behavior of Ti-49 at.% Ni film Luo HB, Shan FL, Hue YL, Wang YM |
309 - 313 |
Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by dc magnetron sputtering Morikawa H, Fujita M |
314 - 319 |
Electrical and optical phototransformation properties in As doped Se thin films El Zawawi IK, Abd Alla RA |