Thin Solid Films

Thin Solid Films, Vol.364, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (57 articles)

1 - 5	Optical second harmonic spectra of silicon-adatom surfaces: theory and experiment Gavrilenko VI, Wu RQ, Downer MC, Ekerdt JG, Lim D, Parkinson P
6 - 11	Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE Ozanyan KB, Parbrook PJ, Hopkinson M, Whitehouse CR
12 - 15	In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry Meyne C, Gensch M, Peters S, Pohl UW, Zettler JT, Richter W
16 - 21	Real-time spectroscopic ellipsometry from 1.5 to 6.5 eV Zapien JA, Collins RW, Messier R
22 - 27	In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy Ebert M, Bell KA, Yoo SD, Flock K, Aspnes DE
28 - 32	Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces Wohner T, Cimalla V, Stauden T, Schaefer JA, Pezoldt J
33 - 39	Characterization of oxide layers on GaAs substrates Allwood DA, Carline RT, Mason NJ, Pickering C, Tanner BK, Walker PJ
40 - 44	In situ characterization of boron nitride layer growth by polarized FTIR reflection spectroscopy Scheible P, Lunk A
45 - 52	Applications of optically detected magnetic resonance in semiconductor layered structures Chen WMM
53 - 57	Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si Bonan J, Meyer F, Finkman E, Warren P, Boher P
58 - 63	InGaP/GaAs heterojunction bipolar transistor optical and electronic band structure characterization Murtagh M, Beechinor JT, Cordero N, Kelly PV, Crean GM, Farrell IL, O'Connor GM, Bland SW
64 - 74	Non-destructive optical depth profiling and real-time evaluation of spectroscopic data Fried M, Redei L
75 - 79	Investigation of Si/SiGe heterostructure material using non-destructive optical techniques Coonan BP, Griffin N, Beechinor JT, Murtagh M, Redmond G, Crean GM, Hollander B, Mantl S, Bozzo S, Lazzari JL, d'Avitaya FA, Derrien J, Paul DJ
80 - 85	Reflected optical fourth harmonic generation at crystalline surfaces Lee YS, Downer MC
86 - 90	Optical second-harmonic generation as a probe of quantum well states in ultrathin Au and Ag films deposited on Si(111) Pedersen TG, Pedersen K, Kristensen TB
91 - 94	Optical second-harmonic phase spectroscopy of the Si(111)-SiO2 interface Aktsipetrov OA, Dolgova TV, Fedyanin AA, Schuhmacher D, Marowsky G
95 - 97	Sensitivity of SHG-measurements on oxide deposition process parameters Bobek T, Stein J, Dekorsy T, Kurz H
98 - 106	Optical characterization of wide bandgap semiconductors Edwards NV, Bremser MD, Batchelor AD, Buyanova IA, Madsen LD, Yoo SD, Welhkamp T, Wilmers K, Cobet C, Esser N, Davis RF, Aspnes DE, Monemar B
IX - IX	Papers presented at the 1999 E-MRS Spring Conference, Symposium P: Optical Characterization of Semiconductor Layers and Surfaces Strasbourg, France, June 1-4, 1999 - Preface Zettler T, Hunderi O, Del Sole R
107 - 110	Si doping of cubic heteroepitaxial GaN layers studied by Raman scattering Bentoumi G, Deneuville A, Bustarret E, Daudin B, Feuillet G, Martinez E, Aboughe-Nze P, Monteil Y
111 - 113	Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV Cobet C, Wilmers K, Wethkamp T, Edwards NV, Esser N, Richter W
114 - 118	Strain in cubic GaN films versus residual hexagonal GaN content Bentoumi G, Deneuville A, Bustarret E, Daudin B, Feuillet G
119 - 123	Raman and electroreflectance analysis of internal electric fields in ZnSe Wagner V, Becker M, Weber M, Fuller T, Korn M, Geurts J
124 - 128	Raman analysis of LO phonon-plasmon coupled modes at ZnS : N/(n+,p+)-GaAs interfaces Pages O, Lazreg A, Zaoui A, Certier M, Thiandoume C, Bouanani A, Svob L, Gorochov O, Bormann D
129 - 137	Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry Collins RW, Koh J, Ferlauto AS, Rovira PI, Lee YH, Koval RJ, Wronski CR
138 - 143	Ellipsometric analysis of polysilicon layers Gruska B
144 - 149	Optical characterization of hydrogenated amorphous carbon (a-C : H) thin films deposited from methane plasma Hong JG, Goullet A, Turban G
150 - 155	In situ spectroscopic ellipsometry for the characterization of polysilicon formation inside a vertical furnace Petrik P, Lehnert W, Schneider C, Fried M, Lohner T, Gyulai J, Ryssel H
156 - 160	Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures Gleize J, Demangeot F, Frandon J, Renucci MA, Kuball M, Grandjean N, Massies J
161 - 164	Optical investigation of InAs/InP quantum dots at different temperatures and under electric field Landin L, Borgstrom M, Kleverman M, Pistol ME, Samuelson L, Seifert W, Zhang XH
165 - 170	Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range Bukkems HG, Oei YS, Richter U, Gruska B
171 - 176	Optical interband spectra and band structure of Ru2Si3 and Ru2Ge3 Henrion W, Rebien M, Birdwell AG, Antonov VN, Jepsen O
177 - 180	An IR-transmission spectroscopical study of the influence of substrate surface defects on the morphology and the electronic structure of ultrathin Fe grown on MgO(001) Fahsold G, Priebe A, Magg N, Pucci A
181 - 185	Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors Grivickas V, Galeckas A, Bikbajevas V, Linnros J, Tellefsen JA
186 - 191	Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures Mizeikis V, Jarasiunas K, Lovergine N, Kuroda K
192 - 195	Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates Derbali MB, Meddeb J, Abraham P
196 - 199	Photoluminescence characterization of non-radiative defect density on silicon surfaces and interfaces at room temperature Timoshenko VY, Petrenko AB, Dittrich T, Fussel W, Rappich J
200 - 203	Infra-red reflectivity of ion-implanted and pulsed excimer laser irradiated 4H-SiC Key PH, Sands D, Schlaf M, Walton CD, Anthony CJ, Brunson KM, Uren MJ
204 - 208	VIS/NIR detector based on mu c-Si : H p-i-n structures Fernandes M, Fantoni A, Martins J, Macarico A, Schwarz R, Vieira M
209 - 212	Optical characterisation of MOVPE-grown Ga1-xMnxAs semimagnetic semiconductor layers Hartmann T, Lampalzer M, Stolz W, Megges K, Lorberth J, Klar PJ, Heimbrodt W
213 - 219	'Real-time' multiwavelength ellipsometry diagnostics for monitoring dry etching of Si and TiNx deposition Kechagias VG, Gioti M, Logothetidis S, Benferhat R, Teer D
220 - 223	Photoreflectance spectroscopy of coupled InxGa1-xAs/GaAs quantum wells Sek G, Ryczko K, Kubisa M, Misiewicz J, Bayer M, Wang T, Koeth J, Forchel A
224 - 227	Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells Donchev V, Germanova K, Shtinkov N, Ivanov I, Vlaev S
228 - 232	Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth Bauer M, Oehme M, Sauter M, Eifler G, Kasper E
233 - 238	Optical characterization of thermally oxidized Si1-x-yGexCy layers Cuadras A, Garrido B, Bonafos C, Morante JR, Fonseca L, Franz M, Pressel K
239 - 243	Optical dielectric function of semiconductors Djurisic AB, Li EH
244 - 248	Optical and structural properties of InGaP heterostructures Moriarty GR, Kildemo M, Beechinor JT, Murtagh M, Kelly PV, Crean GM, Bland SW
249 - 253	Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs Moumanis K, Seisyan RP, Kokhanovskii SI, Sasin ME
254 - 258	Defect related photoluminescence of SiGe/Si heterostructures grown by APCVD Shi JL, Nanver LK, Grimm K, Visser CCG
259 - 263	Impact of neutron irradiation on optical performance of InGaAsP laser diodes Ohyama H, Simoen E, Claeys C, Takami Y, Sunaga H, Yoneoka M, Nakabayashi M, Kobayashi K, Kudou T
264 - 268	Fabrication and characterization of organic semiconductor-based microcavities Masenelli B, Callard S, Gagnaire A, Joseph J
269 - 273	Application of the reflection-absorption spectroscopy to the semiconductor thin films Polit J, Sheregii EM, Sciesinska E, Sciesinski J
274 - 279	Characterization of silicon wafer bonding by observation in transmitted infrared radiation from an extended source Piotrowski T, Jung W
280 - 283	Ultraviolet responsivity control in Schottky barrier heterostructures with textured interface Dmitruk NL, Borkovskaya OY, Mamontova IB, Mayeva OI, Yastrubchak OB
284 - 286	Far-infrared conductivity of the PbZr0.52Ti0.48O3 and Cu-doped PbTiO3 ferroelectric thin films Hovsepyan RK, Kafadaryan EA, Vardanyan ES, Manukyan AL, Vardanyan RS, Grigoryan SG
287 - 290	Effect of above band-gap illumination on structure of free exciton reflection spectra of ZnSe Rakovich Y, Bryja L, Ciorga M, Misiewicz J, Heuken M, Heime K, Yablonskii GP
291 - 295	Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs Andreev AD, O'Reilly EP