Journal of Crystal Growth

Journal of Crystal Growth, Vol.246, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (25 articles)

1 - 8	Temperature control in InGaAs-based quantum well structures grown by molecular beam epitaxy on GaAs (100) and GaAs (111)B substrates Hernando J, Tijero JMG, de Rojas JLS
9 - 14	Atomic depth distribution and growth modes of Sn on Si(111)-4 x 1-In and alpha-root 3 x root 3-Au surfaces at room temperature Yamanaka T, Ino S
15 - 20	Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum Oyama Y, Tezuka K, Suto K, Nishizawa JI
21 - 24	Defect-selective etching of GaN in a modified molten bases system Kamler G, Weyher JL, Grzegory I, Jezierska E, Wosinski T
25 - 30	N-type doping behavior of Al0.15Ga0.85N : Si with various Si incorporations Lee CR
31 - 36	On mass transport and surface morphology of sublimation grown 4H silicon carbide Schulz D, Doerschel J, Lechner M, Rost HJ, Siche D, Wollweber J
37 - 54	A global thermal analysis of multizone resistance furnaces with specular and diffuse samples Perez-Grande I, Rivas D, de Pablo V
55 - 63	The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy Haus E, Smorchkova IP, Heying B, Fini P, Poblenz C, Mates T, Mishra UK, Speck JS
64 - 68	A new phenomenon in the floating-zone (FZ) growth of Si nanowires Hu QL, Li GQ, Suzuki H, Araki H, Ishikawa N, Yang W, Noda T
69 - 72	Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates Shen XM, Fu Y, Feng G, Zhang BS, Feng ZH, Wang YT, Yang H
73 - 77	Temperature dependence of stresses in GaN/AlN/6H-SiC(0001) structures: correlation between AlN buffer thickness and intrinsic stresses in GaN Keckes J, Koblmueller G, Averbeck R
78 - 84	Crystal structure and ferroelectricity of nanocrystalline barium titanate thin films Wang MC, Hsiao FY, Hsi CS, Wu NC
85 - 89	Preparation of high-quality anthracene crystals using double run selective self-seeding vertical Bridgman technique (DRSSVBT) Arulchakkaravarthi A, Laksmanaperumal CK, Santhanaraghavan P, Sivaji K, Kumar R, Muralithar S, Ramasamy P
90 - 98	Relationships between DTA and DIL characteristics of nanosized alumina powders during theta- to alpha-phase transformation Yen FS, Chang JL, Yu PC
99 - 107	Characteristics and crystal structure of the Ba(ZrxTi1-x)O-3 thin films deposited by RF magnetron sputtering Wang MC, Chen CY, Hsi CS, Wu NC
108 - 112	Directional CdS nanowires fabricated by chemical bath deposition Zhang H, Ma XY, Xu J, Niu JJ, Sha J, Yang DR
113 - 120	Thermal stability and interfacial reaction of TiBx films deposited on (100)Si by dual-electron-beam evaporation Lee YK
121 - 126	Growth and characterization of Pb1-x(Mg1-ySry)(x)S thin films prepared by hot-wall epitaxy Abe S, Masumoto K
127 - 132	Investigation of interfacial microstructures of MBE-grown NdF3/Si (111) hetero structures Cho NT, Ko JM, Shim KB, Fukuda T
133 - 138	CrN single-crystal growth using Cr-Ga-Na ternary melt Aoki M, Yamane H, Shimada M, Kajiwara T
139 - 149	Surface imaging of a natural mineral surface using scanning-probe microscopy Bokern DG, Ducker WAC, Hunter KA, McGrath KM
150 - 154	A new phase of cadmium titanate by hydrothermal method Wang H, Zhang XX, Huang AP, Xu HY, Zhu MK, Wang B, Yan H, Yoshimura M
155 - 160	Growth, spectroscopic and thermal behavior of Cd(SCN)(2)(DMSO)(2) Wang XQ, Xu D, Yuan DR, Lu MK, Cheng XF, Huang J, Lu GW, Guo SY, Zhang GH
161 - 168	Sonochemical preparation of lead sulfide nanocrystals in an oil-in-water microemulsion Wang H, Zhang JR, Zhu JJ
169 - 175	Solvothermal preparation of Cu2O crystalline particles Chen SJ, Chen XT, Xue ZL, Li LH, You XZ