1 - 7 |
Stoichiometry, morphology and structure of CdS layers grown on InP(100) from atomic sulfur beam generated from H2S gas and thermally evaporated Cd using molecular beam epitaxy Choi JW, Bhupathiraju A, Hasan MA, Lannon JM |
8 - 18 |
Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 mu m photo-detection Masarotto L, Hartmann JM, Bremond G, Rolland G, Papon AM, Semeria MN |
19 - 26 |
Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers Valcheva E, Paskova T, Monemar B |
27 - 39 |
Role of Marangoni convection in Si-Czochralski melts - Part II: 3D predictions with crystal rotation Kumar V, Basu B, Enger S, Brenner G, Durst F |
40 - 51 |
Comparison between numerical simulation and experimental measurement of solute segregation during directional solidification Stelian C, Duffar T, Nicoara I |
52 - 56 |
GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition Chen DJ, Shen B, Bi ZX, Zhang KX, Gu SL, Zhang R, Shi Y, Zheng YD, Sun XH, Wan SK, Wang ZG |
57 - 62 |
Influence of InGaAs overgrowth layer on structural and optical properties of InAs quantum dots Kim JS, Lee JH, Hong SU, Han WS, Kwack HS, Oh DK |
63 - 67 |
Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction Zheng XH, Chen H, Yan ZB, Han YJ, Yu HB, Li DS, Huang Q, Zhou JM |
68 - 80 |
Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering Ledentsov NN, Bimberg D |
81 - 92 |
Global analysis of a small Czochralski furnace with rotating crystal and crucible Li YR, Akiyama Y, Imaishi N, Tsukada T |
93 - 101 |
High-resolution transmission electron microscopy study of interface structure and strain in epitaxial beta-FeSi2 on Si (111) substrate Han M, Tanaka M, Takeguchi M, Zhang Q, Furuya K |
102 - 106 |
Field electron emission of diamond films grown on the ultrasonically scratched and nano-seeded Si substrates Jiang N, Nishimura K, Shintani Y, Hiraki A |
107 - 113 |
Effects of two-stage deposition on the structure and properties of heteroepitaxial BaTiO3 thin films Towner DJ, Ni J, Marks TJ, Wessels BW |
114 - 118 |
Zinc sulfide nanocrystals on carbon nanotubes Kim H, Sigmund W |
119 - 122 |
Czochralski crystal growth and properties of Na-5[B2P3O13] Li ZH, Wu YC, Fu PZ, Pan SL, Lin ZS, Chen CT |
123 - 129 |
Behavior of trench surface by H-2 annealing for reliable trench gate oxide Kim SG, Roh TM, Kim J, Park IY, Lee JW, Koo JG, Bae IH, Cho KI |
130 - 135 |
Properties of RF magnetron sputtered zinc oxide thin films Ondo-Ndong R, Ferblantier G, Al Kalfioui M, Boyer A, Foucaran A |
136 - 144 |
Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Fujihira K, Kimoto T, Matsunami H |
145 - 149 |
Oriented growth of Ta2O5 films induced by substrate bias Huang AP, Xu SL, Zhu MK, Li GH, Liu T, Wang B, Yan H |
150 - 162 |
Phenomena and mechanisms of mixed crystal formation in solutions I. General concept on the example of the system KHC8H4O4-RbHC8H4O4-H2O Glikin AE, Kovalev SI, Rudneva EB, Kryuchkova LY, Voloshin AE |
163 - 169 |
The overgrowth of hydroxyapatite on new functionalized polymers Dalas E, Chrissanthopoulos A |
170 - 189 |
Determination of growth angles, wetting angles, interfacial tensions and capillary constant values of melts Satunkin GA |
190 - 203 |
Effect of growth rate and composition on the primary spacing, the dendrite tip radius and mushy zone depth in the directionally solidified succinonitrile-Salol alloys Cadirli E, Karaca I, Kaya H, Marasli N |
204 - 211 |
Transverse solidification textures in hexagonal close-packed alloys Bergman MI, Agrawal S, Carter M, Macleod-Silberstein M |
212 - 212 |
History dependence of primary dendrite spacing during directional solidification of binary metallic alloys and interdendritic convection (vol 253, pg 413, 2003) Hui J, Chen YS, Wu X, Tewari SN |