521 - 524 |
Bridgman growth of CdWO4 single crystals Xiao HP, Chen HB, Xu F, Jiang CY, Yang PZ |
525 - 529 |
Characteristic IR radiation accompanying crystallization and window of transparency for it Tatartchenko VA |
530 - 535 |
Vapor-phase growth of high-quality GaN single crystals in crucible by carbothermal reduction and nitridation of Ga2O3 Miura A, Shimada S, Sekiguchi T, Yokoyama M, Mizobuchi B |
536 - 540 |
De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer Saint-Girons G, Sagnes I, Patriarche G |
541 - 544 |
Dependence of the magnetic properties on the Mn/In flux ratio in self-assembled (In1-xMnx)As quantum dots Jeon HC, Kang TW, Kim TW |
545 - 550 |
Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy Weng X, Fisher P, Skowronski M, Salvador PA, Maksimovc O |
551 - 555 |
Structural properties of ZnO thin films on Si substrate using femtosecond laser deposition Yang YF, Long H, Yang G, Dai NL, Zheng QG, Lu PX |
556 - 561 |
Admittance spectroscopy and complex impedance analysis of Ti-modified La0.7Sr0.3MnO3 Rahmouni H, Jemai R, Nouiri M, Kallel N, Rzigua F, Selmi A, Khirouni K, Alaya S |
562 - 569 |
Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon Cheng SF, Gao L, Woo RL, Pangan A, Malouf G, Goorsky MS, Wang KL, Hicks RF |
570 - 574 |
Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique Sahoo T, Kang ES, Kim M, Kannan V, Yu YT, Shin DC, Kim TG, Lee IH |
575 - 578 |
Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) films on different epitaxial bottom electrodes buffered Si substrates Wu F, Li XM, Yu WD, Gao XD |
579 - 583 |
Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride Woo RL, Malouf G, Cheng SF, Woo RN, Goorsky M, Hicks RF |
584 - 593 |
Chemical kinetics and mass transport effects in solution-based selective-area growth of ZnO nanorods Coltrin ME, Hsu JWP, Scrymgeour DA, Creighton JR, Simmons NC, Matzke CM |
594 - 598 |
Growth and characterization of (1-x)PbMg1/3Ta2/3O3-xPbTiO(3) single crystals Kania A, Leonarska A, Ujma Z |
599 - 603 |
Synthesis and luminescence properties of ZnO nanostructures produced by the sol-gel method Li J, Srinivasan S, He GN, Kang JY, Wu ST, Ponce FA |
604 - 611 |
Effect of sodium chloride on the nucleation and polymorphic transformation of glycine Yang X, Lu R, Wang XJ, Ching CB |
612 - 616 |
Preparation and characterization of CdS nanotubes and nanowires by electrochemical synthesis in ion-track templates Mo D, Liu J, Yao HJ, Duan JL, Hou MD, Sun YM, Chen YF, Xue ZH, Zhang L |
617 - 623 |
Optical properties of synthetic crystals of brushite (CaHPO4 center dot 2H(2)O) Madsen HEL |
624 - 628 |
Growth and thermal properties of Cr3+: KAl(MoO4)(2) crystal Wang GJ, Long XF, Zhang LZ, Wang GF |
629 - 634 |
A new interpretation of metastable zone widths measured for unseeded solutions Kubota N |
635 - 638 |
Differential thermal analysis and crystal growth of AgGaS2 Chen BJ, Zhu SF, Zhao BJ, Lei YB, Wu XJ, Yuan ZR, He ZY |
639 - 645 |
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method Wei XC, Zhao YW, Dong ZY, Li JM |
646 - 654 |
Growth of a binary ideal solid solution crystal studied by Monte Carlo simulation Matsumoto K, Irisawa T, Yokoyama E, Kitamura M |
655 - 664 |
Dendritic growth from a binary system in an external flow: Steady state solution with zero surface tension Chen MW, Wang XF, Wang ZD, Xie JX |
665 - 670 |
Single-crystal growth of NaxCo2O4 via a novel low-temperature flux method Tang XF, He J, Aaron K, Abbott E, Kolis JK, Tritt TM |
671 - 675 |
Self-patterned nanocrystals in Zn-In-Sn-O thin films Zhang M, Buchholz DB, Xie SJ, Chang RPH |
676 - 681 |
Atomic force microscopic studies of stabilization of NaCl(113), (112) and (110) surfaces in ethanol, CdCl2/ethanol and HgCl2/ethanol Karino W, Koda H, Nakamura K, Shindo H |
682 - 687 |
Shape of heteroepitaxial island determined by asymmetric detachment Saito Y, Kawasaki R |
688 - 698 |
Growth modification of hematite by phosphonate additives Aschauer U, Jones F, Richmond W, Bowen P, Rohl AL, Parkinson GM, Hofman H |
699 - 705 |
Photoluminescence and transformation of dense Al2O3 : Cr3+ condensates synthesized by laser-ablation route Pan CN, Chen SY, Shen PY |
706 - 715 |
Theoretical surface morphology of {01(1)over-bar2} acute Rhombohedron of calcite - A comparison with experiments and {10(1)over-bar4} cleavage rhombohedron Massaro FR, Pastero L, Rubbo M, Aquilano D |
716 - 722 |
Synthesis and characterization of alpha-MnO2 nanowires: Self-assembly and phase transformation to beta-MnO2 microcrystals Zhang X, Yang WS, Yang JJ, Evans DG |
723 - 723 |
Response to "Comment on'Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy"' [J. Crystal Growth 301-302 (2007) 277] Jo M, Suemune I |
724 - 724 |
Low temperature solid phase Synthesis of pure CdTiO3 submicrocrystals using CdO2 nanoparticles as a precursor (vol 285, pg 600, 2005) Zhang YC, Wang GL, Hu XY, Zhou WD |