E9 - E12 |
Oxygen reduction on teflon bonded Pt/WO3/C electrode in sulfuric acid Sun Z, Chiu HC, Tseung ACC |
H1 - H3 |
Hydroxyl groups on boron-doped diamond electrodes and their modification with a silane coupling agent Notsu H, Fukazawa T, Tatsuma T, Tryk DA, Fujishima A |
L1 - L1 |
Comment on "Effect of dissolved iron on oxygen reduction at a Pt/C electrode in sulfuric acid" Ye S |
L2 - L2 |
Response to "Comment on'Effect of dissolved iron on oxygen reduction at a Pt/C electrode in sulfuric acid' " Sun Z, Tseung ACC |
L3 - L3 |
LiBOB and its derivatives weakly coordinating anions, and the exceptional conductivity of their nonaqueous solutions (vol 4, pg E1, 2001) Xu W, Angell CA |
A19 - A22 |
Expansion of active site area and improvement of kinetic reversibility in electrochemical pseudocapacitor electrode Lee HY, Kim SW, Lee HY |
A23 - A26 |
Ceria-supported platinum as hydrogen-oxygen recombinant catalyst for sealed lead-acid batteries Hariprakash B, Bera P, Martha SK, Gaffoor SA, Hegde MS, Shukla AK |
A27 - A29 |
Enhancement of reversible hydrogen capacity into activated carbon through water electrolysis Jurewicz K, Frackowiak E, Beguin F |
B11 - B13 |
Enhanced passivation of the oxide/SiGe interface of SiGe epitaxial layers on Si by anodic oxidation Rappich J, Sieber I, Knippelmeyer R |
E13 - E15 |
Mixed electronic-oxide ionic conductor of Fe-doped La(Sr)GaO3 perovskite oxide for oxygen permeating membrane Tsuruta Y, Todaka T, Nisiguchi H, Ishihara T, Takita Y |
G23 - G25 |
Epitaxial growth with monosilane gas on a 400 mm diameter silicon wafer Imai M, Nakahara S, Inoue K, Mayusumi M, Gima S |
G26 - G27 |
Implantation induced selective chemical etching of indium phosphide Simpson TW, Gallivan PA, Mitchell IV |
G28 - G30 |
Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance Rauly E, Iniguez B, Flandre D |
G31 - G34 |
Oxygen plasma resistance of low-k organosilica glass films Furusawa T, Ryuzaki D, Yoneyama R, Homma Y, Hinode K |