Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.8, No.8 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (34 articles)

L7 - L7	"Two-dimensional structure induced K+ and Na+ recognition by self-assembled anthraquinone-polyether monolayers on gold electrodes" (vol 7, pg 35, 2004) Echegoyen L
L8 - L8	Response to "Comment on'two-dimensional structure induced K+ and Na+ recognition by self-assembled anthraquinone-polyether monolayers on gold electrodes' Gao ZQ
C99 - C101	ALD of rhodium thin films from Rh(acac)(3) and oxygen Aaltonen T, Ritala M, Leskela M
D19 - D21	Electrolytic ammonia synthesis from hydrogen chloride and nitrogen gases with simultaneous recovery of chlorine under atmospheric pressure Murakami T, Nishikiori T, Nohira T, Ito Y
H61 - H64	Electrochemical impedance biosensor for glucose detection utilizing a periplasmic E-coli receptor protein Wang J, Carmon KS, Luck LA, Suni II
H65 - H67	Temperature-dependent emission spectrum of Ba3MgSi2O8 : Eu2+, Mn2+ phosphor for white-light-emitting diode Kim JS, Park YH, Choi JC, Park HL
A379 - A381	Synchrotron diffraction study of lithium extraction from LiMn0.6Fe0.4PO4 Bramnik NN, Bramnik KG, Nikolowski K, Hinterstein M, Baehtz C, Ehrenberg H
A382 - A384	A high energy rechargeable battery based on a one-step successive two-electron transfer process Nishi K, Nishiumi T, Higuchi M, Yamamoto K
A385 - A388	Synthesis of Li+ ion conductive PEO-PSt block copolymer electrolyte with microphase separation structure Niitani T, Shimada M, Kawamura K, Dokko K, Rho YH, Kanamura K
A389 - A391	High-power SOFC using La0.9Sr0.1Ga0.8Mg0.2O3-delta/Ce0.8Sm0.2O2-delta composite film Yan JW, Matsumoto H, Enoki M, Ishihara T
A392 - A395	Lithium (De) intercalation capacity of Li1.93Mn0.97Ni0.10O3-delta role of oxygen deficiency Pasero D, Gillie LJ, West AR
A396 - A399	Mesoporous FePO4 with enhanced electrochemical performance as cathode materials of rechargeable lithium batteries Shi ZC, Li YX, Ye WL, Yang Y
A400 - A402	Zirconium oxide for PEFC cathodes Liu Y, Ishihara A, Mitsushima S, Kamiya N, Ota K
A403 - A405	Influence of lattice parameter differences on the electrochemical performance of the 5 V spinel LiMn1.5-yNi0.5-zMy+zO4 (M = Li, Mg, Fe, Co, and Zn) Arunkumar TA, Manthiram A
A406 - A408	A sulfur-tolerant anode material for SOFCsGd2Ti1.4Mo0.6O7 Zha SW, Cheng Z, Liu ML
A409 - A413	Phase change in LixFePO4 Yamada A, Koizumi H, Sonoyama N, Kanno R
A414 - A417	Enhanced thermal stability of SOFC anodes made with CeO2-ZrO2 solutions Ahn KY, He HP, Vohs JM, Gorte RJ
A418 - A422	Chemically synthesized nanostructured VN for pseudocapacitor application Choi DW, Kumta PN
A423 - A427	A novel dual-current formation process for advanced lithium-ion batteries Chiang PCJ, Wu MS, Lin JC
A428 - A431	Thermal and electrical properties of new cathode material Ba0.5Sr0.5Co0.8Fe0.2O3-delta for solid oxide fuel cells Wei B, Lu Z, Li SY, Liu YQ, Liu KY, Su WH
C102 - C105	Investigation of the irreversible capacity loss in the layered LiNi1/3Mn1/3Co1/3O2 cathodes Choi J, Manthiram A
C106 - C109	Atomic layer etching of Si(100) and Si(111) using Cl-2 and Ar neutral beam Park SD, Lee DH, Yeom GY
C110 - C113	Improvement of electrolessly gap-filled Cu using 2,2'-dipyridyl and bis-(3-sulfopropyl)-disulfide (SPS) Lee CH, Lee SC, Kim JJ
C114 - C116	Atomic-scale observation on the nucleation and growth of displacement-activated palladium catalysts and electroless copper plating Lai CH, Sung YC, Lin SJ, Chang SY, Yeh JW
G187 - G189	Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide Chen CW, Chien CH, Perng TH, Chang CY
G190 - G193	Voltage-induced material removal for electrochemical mechanical planarization of copper in electrolytes containing NO3-, glycine, and H2O2 Goonetilleke PC, Babu SV, Roy D
G194 - G197	Annealing-induced group V intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy Tripathy S, Chia CK, Dong JR, Chua SJ
G198 - G200	Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices Kim SH, Jeong SW, Hwang DK, Park SJ, Seong TY
G201 - G203	Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides Pan TM, Ko FH, Chao TS, Chen CC, Chang-Liao KS
G204 - G208	In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires Tang Q, Kamins TI, Liu X, Grupp DE, Harris JS
G209 - G211	Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers Tu CH, Chang TC, Liu PT, Zan HW, Tai YH, Feng LW, Wu YC, Chang CY
G212 - G214	Large grain poly-Si thin film fabricated at 180 degrees C employing ELA and ICP-CVD Han SM, Lee MC, Park JH, Song IH, Han MK
G215 - G217	Atomic layer deposition of hafnium silicate gate dielectric films using Hf[N (CH3)(C2H5)](4) and SiH[N(CH3)(2)](3) precursors Kamiyama S, Miura T, Nara Y, Arikado T
G218 - G221	Interfacial reactivity between ceria and silicon dioxide and silicon nitride surfaces - Organic additive effects Carter PW, Johns TP