Naphthoquinone-1,2-Diazaide-Sulfonyl 기 치환 Polysiloxane의 합성과 그 감광특성

강두환; 정낙진

Journal of the Korean Industrial and Engineering Chemistry, Vol.2, No.4, 348-355, December, 1991

Export Citation

Naphthoquinone-1,2-Diazaide-Sulfonyl 기 치환 Polysiloxane의 합성과 그 감광특성

Synthesis and Photocharacteristics of Polysiloxane substituted Naphthoquinone-1,2-diazide sulfonyl group

강두환, 정낙진

초록

Hexamethylcyclotrisiloxane(D₃), tetramethylcyclotetrasiloxane(TMCTS)을 공중합 시켜 Si-H 결합을 함유한 polysiloxane 공중합체를 합성하고 allylamine 과 반응시켜 amino 기를 도입시킨후 naphthoquinone-1,2-diazide-5-sulfonyl chloride 와 반응시켜 naphthoquinone-1,2-diazide-5-sulfonyl 기가 도입된 polysiloxane 을 합성하였다. 생성 공중합체의 열적특성을 측정한 결과, 열분해온도는 360∼450℃ 정도였으며 또한 감광특성은 backbone 수지의 분자량이나 증감제의 종류에 따라 영향을 받았다. Sensitivity는 50-120mJ/cm²였고 contrast(γ)는 1.4∼2.1 였으며 backbone 수지의 분자량이 증가함에 따라 약간 감소하였다.

Polysiloxane copolymers were prepared by copolymerizing hexamethylcyclotrisiloxane with tetramethylcyclotetrasiloxane, and then reacted with allyamine. Copolymers containing naphthoquinone-1,2-diazide-5-sulfonyl group were synthesized by reacting naphthoquinone-1,2-diazide-5-sulfonyl chloride with siloxane copolymers having amino group. Thermal decomposition temperatures of copolymers were 360∼450 ℃, and photosensitive characteristics were dependent on the molecular weights of backbone resins and sensitizers. Sensitivity of copolymers was 50∼120mJ/cm² and contrast (γ) was 1.4∼2.1.

[References]

Yajima S, Hayashi J, Omori M, Chem. Lett., 20, 931 (1975)
Lai JH, Polymer for Electronic Applications, CRC Press (1989)
Pacansky J, Lyerla JR, Photochemical Decomposition Mechanism for AZ-type Photoresist, IBM J. Res. Dev., 23, 42 (1979)
Chinn JD, Adeside I, Wolf ED, Tiberio RC, J. Vac. Sci. Technol., 19(4), 1418 (1981)
Schwartz GC, Schaible PM, Solid State Technol., Nov., 85 (1980)
Herbert JN, Schmidt MA, ACS Symp. Ser., 184, 61 (1982)
Babich, U.S. Patent, 4,603,195
Chujo Y, Murai K, Yamashita Y, Makromol. Chem., 186, 1203 (1985)
Chujo Y, Murai K, Yamashita Y, Makromol. Chem., 186, 1211 (1985)
delaHarpa R, Ber., 21, 1401 (1888)
Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 1(2), 161 (1990)
Hiraoka H, Pancansky JA, J. Vac. Sci. Technol., 19(4), 1132 (1981)
Lai JH, Shepherd LT, J. Electrochem. Soc., 126, 696 (1979)

[Referenced By]

[1] Yajima S, Hayashi J, Omori M, Chem. Lett., 20, 931 (1975)

[2] Lai JH, Polymer for Electronic Applications, CRC Press (1989)

[3] Pacansky J, Lyerla JR, Photochemical Decomposition Mechanism for AZ-type Photoresist, IBM J. Res. Dev., 23, 42 (1979)

[4] Chinn JD, Adeside I, Wolf ED, Tiberio RC, J. Vac. Sci. Technol., 19(4), 1418 (1981)

[5] Schwartz GC, Schaible PM, Solid State Technol., Nov., 85 (1980)

[6] Herbert JN, Schmidt MA, ACS Symp. Ser., 184, 61 (1982)

[7] Babich, U.S. Patent, 4,603,195

[8] Chujo Y, Murai K, Yamashita Y, Makromol. Chem., 186, 1203 (1985)

[9] Chujo Y, Murai K, Yamashita Y, Makromol. Chem., 186, 1211 (1985)

[10] delaHarpa R, Ber., 21, 1401 (1888)

[11] Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 1(2), 161 (1990)

[12] Hiraoka H, Pancansky JA, J. Vac. Sci. Technol., 19(4), 1132 (1981)

[13] Lai JH, Shepherd LT, J. Electrochem. Soc., 126, 696 (1979)