3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향

장은정; Sarah Pfeiffer; Bioh Kim; Thorsten Matthias; 현승민; 이학주; 박영배; Eun-Jung Jang; Sarah Pfeiffer; Bioh Kim; Thorsten Matthias; Seungmin Hyun; Hak-Joo Lee; Young-Bae Park

Korean Journal of Materials Research, Vol.18, No.4, 204-210, April, 2008

DOI10.3740/MRSK.2008.18.4.204 Export Citation

3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향

Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration

장은정, Sarah Pfeiffer¹, Bioh Kim¹, Thorsten Matthias¹, 현승민², 이학주², 박영배^†

안동대학교 신소재공학부
¹EV Group
²한국기계연구원

Eun-Jung Jang, Sarah Pfeiffer¹, Bioh Kim¹, Thorsten Matthias¹, Seungmin Hyun², Hak-Joo Lee², and Young-Bae Park^†

School of Materials Science and Engineering, Andong National University, Andong 760-749, Korea
¹EV Group, Arizona, USA, Korea
²Division of Nano-Mechanical Systems Research, Korea Institute of Machinery & Materials, Daejeon, Korea

E-mail:

1.5 μm-thick copper films deposited on silicon wafers were successfully bonded at 415oC/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than 10.4 J/m2 as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than 300oC had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over 400oC. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

Keywords:Adhesion;3-D Integration;4-point bending test;Cu-Cu bonding;post annealing

[References]

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Chen KN, Tan CS, Fan A, Reif R, Appl. Phys. Lett., 86, 011903 (2005)
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Koo JM, Vu BQ, Kim YN, Lee JB, Kim JW, Kim DU, Moon JH, Jung SB, JEM., 37(1), 118 (2007)
Fan A, Rahman A, Reif R, Electrochem. Solid State Lett., 2(10), 534 (1999)
Chen KN, Chang SM, Shen LC, Reif R, J. E. M., 35(5), 1082 (2006)
Tan CS, Reif R, Theodore ND, Pozder S, Appl. Phys. Lett., 87, 201909 (2005)
Chen KN, Fan A, Tan CS, Reif R, J. E. M., 32(12), 1371 (2003)
Chen J, Zhang PY, Zhang L, Chem. Lett., 35(2), 230 (2006)
Shaviv R, Toham S, Woytowitz P, Microelectromic. Eng., 82, 99 (2005)
Zhenyu H, Suo Z, Guanghai X, Jun H, Prevost JH, Sukumar N, Eng. Fracture Mech., 72, 2584 (2005)
Charalambides PG, Lund J, Evans AG, McMeeking RM, J. Appl. Mech., 111, 77 (1989)
Tadepalli R, Thompson CV, Appl. Phys. Lett., 90, 151919 (2007)
Yi SM, An JU, Hwang SS, Yim JR, Huh YH, Park YB, Joo YC, Thin Solid Films, 516(8), 2325 (2008)
Tomesakai N, Suzuki M, Komeno J, J. Electrochem. Soc., 140, 2432 (1993)
Hirodawa K, Yokokawa Y, Oku M, S. I. A., 3(2), 81 (1981)

[Referenced By]

[1] Tadepalli T, Thesis PD, p. 13-17, Massachuesetts Institute of Technology, USA (2006). (2006)

[2] Chen KN, Tan CS, Fan A, Reif R, Appl. Phys. Lett., 86, 011903 (2005)

[3] Ruythooren W, Beltran A, Labie R, in proceedings of the Electronics Packaging Technology Conference (Singapore, December 2007) p.51 (2007)

[4] Koo JM, Vu BQ, Kim YN, Lee JB, Kim JW, Kim DU, Moon JH, Jung SB, JEM., 37(1), 118 (2007)

[5] Fan A, Rahman A, Reif R, Electrochem. Solid State Lett., 2(10), 534 (1999)

[6] Chen KN, Chang SM, Shen LC, Reif R, J. E. M., 35(5), 1082 (2006)

[7] Tan CS, Reif R, Theodore ND, Pozder S, Appl. Phys. Lett., 87, 201909 (2005)

[8] Chen KN, Fan A, Tan CS, Reif R, J. E. M., 32(12), 1371 (2003)

[9] Chen J, Zhang PY, Zhang L, Chem. Lett., 35(2), 230 (2006)

[10] Shaviv R, Toham S, Woytowitz P, Microelectromic. Eng., 82, 99 (2005)

[11] Zhenyu H, Suo Z, Guanghai X, Jun H, Prevost JH, Sukumar N, Eng. Fracture Mech., 72, 2584 (2005)

[12] Charalambides PG, Lund J, Evans AG, McMeeking RM, J. Appl. Mech., 111, 77 (1989)

[13] Tadepalli R, Thompson CV, Appl. Phys. Lett., 90, 151919 (2007)

[14] Yi SM, An JU, Hwang SS, Yim JR, Huh YH, Park YB, Joo YC, Thin Solid Films, 516(8), 2325 (2008)

[15] Tomesakai N, Suzuki M, Komeno J, J. Electrochem. Soc., 140, 2432 (1993)

[16] Hirodawa K, Yokokawa Y, Oku M, S. I. A., 3(2), 81 (1981)