In this study, we have purposed to combine both polystyrene (PS) and 3,4-ethylenedioxythiophene (EDOT) groups as a gate dielectric and to fabricate a transparent organic field effect transistor (OFET) device with polymeric gate electrode using this novel organic dielectric material. The focus point of this work is to obtain a transparent OFET and to minimize the interface states between gate insulator and gate electrode. Firstly, we have synthesized EDOT functional polystyrene (PS-EDOT) copolymer as gate insulator via “click” chemistry between azide-functional styrene copolymer and propargyl-functionalized EDOT. We used the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) conductive polymer mixture as a suitable alternative gate electrode instead of inorganic contacts, which is a new topic in the organic electronics. The contact resistance value was measured as 1/600 (S/cm)-1. At the end of the process transparent OFETs with different channel length were fabricated using spin coating method by which poly(3-hexylthiophene) (P3HT), novel PS-EDOT copolymer insulator and PEDOT:PSS were coated on prepatterned OFET substrate. Electrical characterizations of OFET devices were held in total darkness and in air ambient in order to achieve output and transfer current-voltage (I-V) characteristics. The main parameters such as the threshold voltage (V Th ), field effect mobility (μFET) and current on/off ratio (Ion/off) of the devices were extracted from capacitance-frequency (C-f) plot. It was found that fabricated PS-EDOT OFETs exhibit good device performances such as low V Th , remarkable mobility, and Ion/off values.